Allicdata Part #: | DMP2200UDW-13DITR-ND |
Manufacturer Part#: |
DMP2200UDW-13 |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2P-CH 20V 0.9A SOT363 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 900mA 450mW Su... |
DataSheet: | DMP2200UDW-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.04173 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 900mA |
Rds On (Max) @ Id, Vgs: | 260 mOhm @ 880mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 184pF @ 10V |
Power - Max: | 450mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
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The DMP2200UDW-13 is a semiconductor device designed for use in high-voltage, low-leakage applications such as industrial, automotive and aviation systems. The DMP2200UDW-13 offers unmatched performance and flexibility to designers of these systems. As an array of FETs (Field Effect Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), this device makes use of vertical N- and/or P-channel MOSFETs. It is packaged in a small, space-saving, surface-mount package.
The DMP2200UDW-13 has various applications. In automobiles, it can be used in power inverters, power steering systems and power steering torque control systems. In industrial control, it can be used for motor drives, pulse speed control and PWM (Pulse Width Modulation) control. In aviation, it can be used in high-voltage power converters, power amplifiers and other high-end systems.
The working principle of the device is based on the effect of bias voltage on the vertical channel of the MOSFET and the gate. The bias voltage is applied between the source, the gate, and the drain pins of the device. When a bias voltage is applied, electrons move into the depletion region of the vertical channel and current flows through the channel. This current is then regulated by the gate voltage.
The main advantage of the DMP2200UDW-13 is that it can be configured in a variety of ways to meet different design requirements. For instance, it can be configured as an N- or P-channel MOSFET, or as an array of both. Additionally, it can be used to provide a high input impedance, low on-resistance, fast switching speed and low power consumption. This can result in improved system performance, increased design flexibility and reduced component costs.
The DMP2200UDW-13 can be used in any environment where low power dissipation and high current flow are desired. It is well suited for use in low-voltage applications as well as for high-voltage military and aerospace applications. The device is robust and highly reliable, making it an ideal solution for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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