DMP22D4UDA-7B

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DMP22D4UDA-7B is an array of four N-channel enhancement-mode field-effect transistors (FETs), on a single chip with dual gate silicon. It is designed for high-speed switching applications requiring low distortion and low noise.

The DMP22D4UDA-7B has a wide drain-source breakdown voltage range and can support both high and low drain-source currents. It also has a very low gate threshold voltage, making it suitable for high-speed switching applications. The device can operate from 2.5V to 25V drain-source and up to 5.5V gate-source voltage.

The DMP22D4UDA-7B is commonly used in applications such as digital and analog signal processing, power management, motor control, and switching power converters.

The working principle of the DMP22D4UDA-7B is based on field-effect technology. In this technology, a voltage applied to the gate will cause electrons to move through the semiconductor material and form a channel between the source and drain. As a result, the current flow between the source and drain will increase or decrease as the voltage applied to the gate increases. When forward biased, the transistor will be “on” and will conduct current. When reversed biased, the transistor will be “off” and will not conduct current.

The DMP22D4UDA-7B is designed to provide low power consumption and low on-resistance. This translates to improved efficiency, thus reducing total system costs. The device also features a built-in zener diode for a fail-safe, reverse-power protection. This ensures that the device will not be damaged should a reverse bias be applied to the drain.

In addition, the DMP22D4UDA-7B has a dV/dt rating of > 1V/ns which makes it suitable for high-speed switching applications. It also has an input capacitance of < 50pF, allowing for low noise operation. With its wide drain-source breakdown voltage range and low on-resistance, the DMP22D4UDA-7B is a versatile and reliable device for high-speed switching applications.

The specific data is subject to PDF, and the above content is for reference