DMP3098LSD-13 Allicdata Electronics
Allicdata Part #:

DMP3098LSD-13DITR-ND

Manufacturer Part#:

DMP3098LSD-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2P-CH 30V 4.4A 8-SOIC
More Detail: Mosfet Array 2 P-Channel (Dual) 30V 4.4A 1.8W Surf...
DataSheet: DMP3098LSD-13 datasheetDMP3098LSD-13 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 65 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 336pF @ 25V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

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The DMP3098LSD-13 is a MOSFET array with a 3-in-1 configuration. It is a monobloc consisting of N-Channel MOSFETs that share the same drain terminal. This component provides an optimal solution for power line level connection applications where high frequency, low on-resistance, and low gate drive power are required, as well as outstanding power ratings.

It is particularly suited for medium- and high-power distribution systems and can be implemented in various commercial and industrial applications including motor control, switched-mode power supplies, and power distribution. It is also suitable for automotive applications such as engine and transmission control.

The DMP3098LSD-13 is designed to provide a high degree of electrical isolation between three independent MOSFETs, allowing them to safely withstand very large common mode voltages. It features an exceptionally low on-resistance per cell, which allows it to deliver high levels of power efficiency. Its low gate drive capability reduces conduction losses while its high peak current withstand capability ensures an improved overall power output.

This component features a versatile footprint and pinout arrangement that allows it to be easily threaded and directly mounted onto a printed circuit board. It has a low-profile package to reduce parasitic capitance and inductance, and a thin lead frame with a high thermal conductivity to efficiently dissipate heat away from the source.

The DMP3098LSD-13 operates according to the principle of metal-oxide-silicon field-effect transistors (MOSFETs). It consists of an array of three N-channel MOSFETs with three separate drain terminals and an integrated source. The MOSFETs are electrically isolated from each other, allowing them to withstand large common mode voltages. A gate bias voltage is applied to the gate terminal of each MOSFET to achieve the desired on-state.

In operation, the device will draw current through its drain terminals, which then passes through the integrated MOSFETs to the source terminal. As the voltage across the source is equal to the drain voltage, the on-state resistance is minimized. The application of the gate voltage modulates the resistance of the conducting channel, allowing the control of the current conduction through the device.

The DMP3098LSD-13 is a 3-in-1 array of N-Channel MOSFETs that features a high degree of electrical isolation and outstanding power ratings. It offers a great solution for power line level connection applications that require high frequency, low on-resistance, and low gate drive power. It can be used in various commercial and industrial applications, including motor control, switched-mode power supplies, power distribution, and automotive applications such as engine and transmission control.

The specific data is subject to PDF, and the above content is for reference

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