DMP3018SFK-7 Allicdata Electronics
Allicdata Part #:

DMP3018SFK-7DITR-ND

Manufacturer Part#:

DMP3018SFK-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 30V 10.2A DFN2523-6
More Detail: P-Channel 30V 10.2A (Ta) 1W (Ta) Surface Mount U-D...
DataSheet: DMP3018SFK-7 datasheetDMP3018SFK-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 6-PowerUDFN
Supplier Device Package: U-DFN2523-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4414pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 9.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMP3018SFK-7 is a dual, N-channel, depletion-mode, MOSFET that has been designed primarily for applications that require high-speed switching. The device consists of two independent, floating gates which can be used to independently control the flow of current.

The DMP3018SFK-7 provides the user with the ability to operate in both enhanced and depletion modes and can handle voltages of up to 60 volts. The device is constructed with a planar topology and is rated for a maximum channel temperature of 175°C. The device is also capable of obtaining a gate to source voltage gate leakage current up to 1μA.

The DMP3018SFK-7 is used in many applications requiring high-speed switching. It is commonly used in applications such as power MOSFETs, voltage regulators and voltage-sensitive relays. The device is capable of offering high-frequency switching performance due to its low gate-to-drain resistances and the ability to drive both load and gate capacitances.

The working principle of the DMP3018SFK-7 comprises of two floating gates that are used to independently control the current flow through the device. The floating gates are used to control the threshold voltage, and when sufficient voltage is applied to the gate, the device begins to conduct and the current may flow to the source. The enhanced and depletion mode can be used to control the current flow, such that in a depletion mode, the device does not conduct, and in an enhancement mode, the device will allow a current to pass until the source voltage falls below the gate voltage.

The device is commonly used in applications in the communications, automotive, automotive electronics and consumer electronic sectors, where it is utilised in order to provide high-speed switching performance. Its ability to efficiently handle load and gate capacitive loads makes it a very useful device for applications with large load and/or gate-capacitance.

In conclusion, the DMP3018SFK-7 is a dual, N-channel depletion-mode MOSFET designed primarily for applications that require high-speed switching. It can handle voltages of up to 60 volts and has a maximum channel temperature of 175°C. Its low gate-to-drain resistances and the ability to drive both load and gate capacitances make it ideal for applications in the communications, automotive and consumer electronic sectors, where it is used to provide high-speed switching performance.

The specific data is subject to PDF, and the above content is for reference

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