DMP3085LSS-13 Discrete Semiconductor Products

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MOSFETs (metal-oxide-semiconductor field effect transistors) are a type of transistor that rely on the application of a voltage to change the flow of current between the source and drain. The DMP3085LSS-13 is a N-Channel MOSFET that is often used as a power switch and regulator. The MOSFET features an exceptionally low on-resistance and fast switching speed.

The DMP3085LSS-13 is a small and compact MOSFET that measures only 13 square millimeters. It is designed to be used with low voltage applications, such as those below 30 volts, and operates with a reverse voltage up to 12 volts. It features a low on-resistance of 0.017 Ohms and a fast switching time of 4.9ns. It also has a maximum drain current of 100mA, a typical drain-source on-resistance of 0.013 Ohms, and a maximum gate-source voltage of 20 volts.

The DMP3085LSS-13 is mainly used in applications requiring low voltage, high performance, and fast switching times. These applications range from voltage regulators, to switched power supplies, to power switches and relays. The MOSFET can also be used in automotive and industrial applications, as it is designed to withstand operation in extreme temperatures ranging from -55 to 175 degrees Celsius.

The working principle of the MOSFET is based on the movement of electrons and holes through the P-N layer of a MOSFET. This layer is composed of two doped regions, the P region (positively charged) and the N region (negatively charged). The movement of electrons and holes through this layer changes the conductivity of the device and therefore changes the current flowing through it. When a voltage is applied to the gate terminal, it induces a change in the potential between the source and drain. This change in potential is responsible for controlling the flow of current, thereby enabling the use of the MOSFET as a power switch.

In summary, the DMP3085LSS-13 is a N-Channel MOSFET with a low on-resistance, fast switching speed, and a maximum drain current of 100mA. It is mainly used in low voltage applications requiring high performance and fast switching time. Its working principle is based on the movement of electrons and holes through the P-N layer of the MOSFET, which in turn controls the flow of current through the device. This makes it an ideal choice for power switch and regulator applications.

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