| Allicdata Part #: | DMP3015LSSQ-13DITR-ND |
| Manufacturer Part#: |
DMP3015LSSQ-13 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET P-CH 30V 13A 8-SO |
| More Detail: | P-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-S... |
| DataSheet: | DMP3015LSSQ-13 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2748pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 60.4nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 11 mOhm @ 13A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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DMP3015LSSQ-13 is a type of Field Effect Transistor (FET) which is commonly used for a variety of purposes. This member of the FET family is a MOSFET, or Metal Oxide-Semiconductor Field-Effect Transistor. It is a single FET, meaning it has one conduction terminal and one gate terminal. It is usually classified as an SMT (Surface Mount Technology) component and is packaged in the Small Outline or TSOP (Thin Small Outline Package) form.
DMP3015LSSQ-13 is popular for power conversion, signal switching, and signal amplification across a wide range of applications. In particular, it is used in voltage regulator circuits, as well as small audio amplifiers and oscillators. It also finds application in systems relaying low frequency and high current signals. This includes motor vehicle audio systems and in industrial power devices.
The working principle of a FET is particularly useful in controlling high currents and a high level of power. It works on the basis that the flow of current through a channel is controlled by a gate voltage. It follows the Gate-to-Source voltage (Vgs) having an effect on the threshold voltage of the device, thus allowing increased or decreased current through the channel. Thus, the current flow from drain to source can be increased, decreased or turned off, simply by adjusting the Gate-to-Source voltage.
In comparison to Junction Field-Effect Transistors, which are constructed from multi-layered semiconductor material, DMP3015LSSQ-13 MOSFETs provide for a high transconductance when left in the OFF state. The main advantage of the MOSFET is its near ideal characteristics, such as low input impedance, fast switching, low on-leakage current and low off-state leakage current. In addition, the device is capable of operation at frequencies up to 40 kHz and can be pushed higher with the help of a few external components.
DMP3015LSSQ-13 is also noted for its heavy-duty functions, medium to high current handling capability, moderate speed switching and less power waste because of the low input capacitance. Thus, these devices are highly reliable and desirable in many applications. They also come in different voltage and current ratings, allowing users to select the most suitable device for their system.
In summary, DMP3015LSSQ-13 is a single FET which is ideally suited for power conversion, signal switching and signal amplification applications. It usually operates as an SMT component and its Gate-to-Source voltage (Vgs) has an effect on the threshold voltage of the device, which allows for adjustable current flow. When compared to Junction FETs, DMP3015LSSQ-13 offers improved switching speed and reliability, and has a high current handling capability, medium to high-speed switching and low power waste. For these reasons, it is a highly sought-after device in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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DMP3015LSSQ-13 Datasheet/PDF