DMP3010LK3-13

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The DMP3010LK3-13 is a N-Channel Enhancement Mode MOS Field-Effect Transistor (FET) that has been designed specifically for low voltage load switch applications. This product is offered in a 3-pin SOT23 package and is targeted at applications such as battery-powered systems, portable instruments, and laptop computers. The device is offered in an exposed pad SOT23 package and utilizes a high performance trench-gate cell structure with a low on-resistance that helps to minimize power consumption during normal operation. Additionally, the device is provided with an advanced electrostatic protection structure which helps to protect it against ESD damage.

Applications

The low on-resistance of the DMP3010LK3-13 helps to minimize power consumption. This makes it a suitable choice for load switch applications where power savings is critical. Its 3-pin SOT23 package makes it well suited for portable applications such as smartphones, tablet computers, and laptop computers. Additionally, its high electrostatic protection makes it a suitable choice for applications in industrial, automotive, and medical industries where ESD protection is essential.

Working Principle

The DMP3010LK3-13 is a N-Channel Enhancement Mode MOS Field-Effect Transistor (FET). This type of transistor has three terminals, namely source, gate and drain. The current flow between source and drain is determined by the voltage applied to the gate. When the voltage on the gate is below the threshold voltage, the device is in the off-state and no current can flow between source and gate. When the gate voltage is raised above the threshold voltage, the device enters the enhancement mode where current flows between source and drain. This is due to the fact that the drain-to-source resistance is decreased by the increased gate voltage.

The DMP3010LK3-13 uses a trench-gate cell structure, which results in a very low on-resistance and higher current capacity. Additionally, the device is designed with an integrated electrostatic protection device, which helps to protect it from ESD damage.

Conclusion

The DMP3010LK3-13 is a N-Channel Enhancement Mode MOS Field-Effect Transistor designed for low voltage load switch applications. The device is offered in a 3-pin SOT23 package and features a high performance trench-gate cell structure, low on-resistance, and advanced electrostatic protection. It is suitable for use in a wide variety of applications including portable instruments, laptop computers, and industrial, automotive, and medical applications.

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