DMP3026SFDF-13

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	6-UDFN Exposed Pad
Supplier Device Package:	U-DFN2020-6 (Type F)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1204pF @ 15V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	19.6nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	19 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	10.3A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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DMP3026SFDF-13 is an EPD (enhanced Power MOSFET) device with low total gate charge, low RDS(ON), rated at 8A and 30V. It is designed to operate at high speed, suitable for use in high power switching applications such as DC-DC converters, laptops, tablet PCs, power supplies and other circuit designs.The overall structure of DMP3026SFDF-13 is an FET (Field Effect Transistor). FETs are three terminal semiconductor devices similar to bipolar junction transistors (BJTs), but in FETs, the current is controlled by an electric field in the gate. The most common type of FET today is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). MOSFETs are constructed by combining the three layers of gate oxide, gate material, and semiconductor material. Depending on the type of gate material used, they can be classified as Unmatched MOSFET (thick oxide), Lateral MOSFET (thin oxide), and High Voltage MOSFET (ultra-thin oxide). DMP3026SFDF-13 is a Unmatched MOSFET (thick oxide). MOSFETs are an important type of transistor in electronic systems and are used in many devices to control power. MOSFETs are used to control the flow of current into a load or device by controlling the voltage at the gate terminal.The working principle of DMP3026SFDF-13 is based on the field effect of the gate voltage. When the gate voltage is applied, it attracts mobile charges in the region of the device and depletes the channel between the source and drain region. The depletion region is called the “inversion” layer and the higher the voltage applied to the gate, the wider the inversion layer will become. When the gate voltage of a MOSFET device is increased, the resistivity of the channel (RDS) decreases and the device automatically turns on. If the gate voltage is reduced, the resistivity of the channel (RDS) increases and the device turns off. Therefore, MOSFETs can be used to control the flow of current in an electronic circuit.In DMP3026SFDF-13, the gate charge is low and the RDS (ON) is low, which makes it suitable for use in high power switching applications. The device can operate at higher speed and it can be used to switch on and off rapidly in circuit designs. DMP3026SFDF-13 is also a very efficient device with a low voltage drop across the device when on.In summary, DMP3026SFDF-13 is a Unmatched MOSFET device with low total gate charge, low RDS(ON), rated at 8A and 30V. It is suitable for use in high power switching applications such as DC-DC converters, laptops, tablet PCs, power supplies and other circuit designs. The working principle of DMP3026SFDF-13 is based on the field effect of the gate voltage and it can be used to control the flow of current in an electronic circuit.

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