DMP3050LVT-7 Allicdata Electronics
Allicdata Part #:

DMP3050LVT-7DITR-ND

Manufacturer Part#:

DMP3050LVT-7

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P CH 30V 4.5A TSOT26
More Detail: P-Channel 30V 4.5A (Ta) 1.8W (Ta) Surface Mount TS...
DataSheet: DMP3050LVT-7 datasheetDMP3050LVT-7 Datasheet/PDF
Quantity: 1000
1 +: $ 0.11000
10 +: $ 0.10670
100 +: $ 0.10450
1000 +: $ 0.10230
10000 +: $ 0.09900
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DMP3050LVT-7 Application Field and Working Principle

The DMP3050LVT-7 is a third-generation high-voltage Power MOSFET with an integrated protection circuit and low on-state resistance. This MOSFET is ideal for applications such as pulse-width modulation, DC-DC converters, and low-voltage motor control. It is designed to combine high-performance circuitry with the benefits of Industry Standard 3-pin packages.

This MOSFET has a wide range of features and benefits, including its low on-resistance for increased efficiency, very low gate-charge for reduced circuit losses, and its protection circuit for device and system safety. Additionally, the DMP3050LVT-7 provides improved thermal performance over previous generations of MOSFETs.

DMP3050LVT-7 Working Principle

The DMP3050LVT-7 is a MOSFET which uses metal oxide semiconductor technology to control electrical current between the source and the drain. This type of transistor is controlled by applying a low voltage signal to a gate electrode which is separated from the source and drain electrodes by a thin insulating layer. When the gate voltage is low, no current flows through the MOSFET, however when the gate voltage is high, the MOSFET will become “open”, or “on”, and current will flow between the source and drain.

The DMP3050LVT-7 is designed for applications where low-power control is needed for switching high voltages and currents. The MOSFET is designed to be able to withstand up to 1000 volts and 20 amps of current. With its low gate-charge and on-resistance, it is able to provide improved performance when compared to previous generations of MOSFETs. The MOSFET also features an integrated protection circuit which helps to protect the device from damage due to excessive cycling or overloading.

DMP3050LVT-7 Application Field

Due to its low on-resistance and integrated protection circuit, the DMP3050LVT-7 is suitable for a wide range of applications, including the following:

High-voltage DC-DC converters, such as smart phone chargers, laptop adapters, and power adapters.

Pulse-width modulation (PWM) applications, such as motor control, AC power inverters, and general switching applications.

Low-voltage motor control applications including speed control, direction control, and overload protection.

High-power switching applications such as automotive headlight control and LED lighting.

AC-DC power supply for LED lighting applications.

Conclusion

The DMP3050LVT-7 is a third-generation high-voltage Power MOSFET with an integrated protection circuit and low on-state resistance. It is designed to combine high-performance circuitry with the benefits of Industry Standard 3-pin packages. It is suitable for many applications such as DC-DC converters, PWM control, low-voltage motor control and power switching, due to its low on-resistance and integrated protection circuit.

The specific data is subject to PDF, and the above content is for reference

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