DMP3026SFDF-7 Allicdata Electronics
Allicdata Part #:

DMP3026SFDF-7-ND

Manufacturer Part#:

DMP3026SFDF-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 30V 10.3A UDFN2020-6
More Detail: P-Channel 30V 10.3A (Ta) 2W (Ta) Surface Mount U-D...
DataSheet: DMP3026SFDF-7 datasheetDMP3026SFDF-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type F)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1204pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 19 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DMP3026SFDF-7 is a single N-channel Field Effect Transistor (FET). It can be used to switch and amplify electronic signals. This type of transistor is used in applications like voltage regulations, electrical motors, equipment, battery chargers, etc. It\'s a smaller device which makes it ideal for use in extremely small spaces.

The FET consists of four terminals, namely source, gate, drain, and bulk. The source, gate, and drain are made up of a semiconductor material, while the bulk is made up of a metallic material. These components are connected together to form an electrical circuit.

The working principle of a Field-Effect Transistor (FET) is fairly straightforward. When a voltage is applied to the gate terminal, it attracts electrons from the bulk terminal and repels electrons from the drain terminal. This creates a conductive channel between the source and the drain, allowing current to flow from the source to the drain. This action is referred to as "channel formation", and is the basis for this type of transistor.

The DMP3026SFDF-7 can be used in many different applications which require the switching and amplification of electronic signals. It is suitable for high-speed switching between AC and DC applications. It also has low gate leakage characteristics, making it very useful in high-current applications. It is also used in power control circuits and high-frequency circuits.

This type of FET is also used in a wide range of power management circuits. For example, it can be used to provide low-noise and high-efficiency power supply regulation, as well as switching circuit applications. It can also be used in high-frequency circuits, such as RF receivers, radio frequency amplifiers, and radio frequency synthesizers.

In addition, it can be used as a voltage regulator in digital systems. It can switch DC loads with very low-power requirements. It also boasts very high input and output impedance, allowing for very efficient power conversion. Additionally, it is resistant to temperature and humidity variations.

The DMP3026SFDF-7 is an effective and reliable FET for a wide range of electrical and electronic applications. Its smaller size and low leakage characteristics make it particularly suited to high-current applications. It is also suitable for high-speed switching between AC and DC applications. Furthermore, it can be used in a wide range of power management circuits, as well as in high-frequency circuits.

The specific data is subject to PDF, and the above content is for reference

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