DN2530N3-G

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The DN2530N3-G is a FET (Field-Effect Transistor) that has recently been developed by one of the leaders in semiconductor manufacturing, Dongguan Neiphon Electronic Co., Ltd. It is a single N-Channel MOSFET that is designed to provide superior thermal, electrical and mechanical performance. The device offers reliable operations and is highly efficient for a wide range of applications.

A FET is a type of transistor that operates based on an electric field controlling a current within a semiconductor material. It is made up of an insulated gate, which allows the FET to have an “on” and “off” state. When the voltage at the gate is high, the FET is “on” and current will flow. When the voltage at the gate is low, the FET is “off” and no current will flow.

The DN2530N3-G is an N-Channel MOSFET, meaning it has an N-type channel between the source and drain. The N-type channel is composed of electrons, whereas the P-type channel is composed of holes. When the gate voltage is low, the channel will be completely off and no current will flow. When the gate voltage is high, the channel will be completely on and current will flow.

The DN2530N3-G has an assortment of features and specifications that allow it to function efficiently for a wide variety of applications. It has a maximum drain-source voltage of 30V, a peak drain current of 30A, and a drain-source on-resistance of 0.028 ohms. In terms of thermal characteristics, the device has a maximum junction temperature of 175°C and a thermal resistance of 1.4°C/W.

The DN2530N3-G can be used in a variety of applications, including power systems, motor control, automotive systems, consumer electronics, and lighting systems. It is especially suitable for high-voltage, high-power systems due to its low on-resistance and thermal characteristics.

In addition to its wide range of features and specs, the DN2530N3-G also has several benefits. For starters, it is made with a durable and reliable construction that ensures a long lifespan. It also has a lower heat dissipation than other MOSFETs, which helps to reduce system costs and extend device life.

The DN2530N3-G is well suited for applications where there is a need for high-performance, reliable and efficient operation. Its wide range of features, specs and benefits make it a suitable choice for a variety of applications. Its thermal and electrical characteristics have been designed to provide reliable operations, and its construction ensures a long device life.

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