DN2540N8-G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	400V
Current - Continuous Drain (Id) @ 25°C:	170mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):	0V
Rds On (Max) @ Id, Vgs:	25 Ohm @ 120mA, 0V
Vgs(th) (Max) @ Id:	--
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	300pF @ 25V
FET Feature:	Depletion Mode
Power Dissipation (Max):	1.6W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-243AA (SOT-89)
Package / Case:	TO-243AA

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DN2540N8-G is a field-effect transistor (FET) designed for a range of general purpose applications. It is specifically designed to provide a low-cost and reliable solution for high-current switching, signal conditioning, and power regulation. The DN2540N8-G is a single-ended, enhancement mode, N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The two terminals of the FET are the gate and drain. The source terminal is not exposed, and instead a conductive layer is between the gate and drain to complete the connection.The working principle of the DN2540N8-G is that when a voltage is applied to the gate, a small electrical current is created which causes a layer of electrons to be attracted to the gate. This layer of electrons creates an electric field which effectively turns the transistor on. When the voltage at the gate is increased, the electric field only increases its strength. When the electric field is strong enough, it attracts enough electrons for the transistor to become fully turned on.The on-state resistance of the DN2540N8-G is generally much lower than other types of transistors. This means that it can operate with a much lower voltage drop than other transistors, and thus will require fewer components to power a device. The low on-state resistance also makes the DN2540N8-G much more efficient and can make it much less power hungry than other transistors.As a result, the DN2540N8-G is ideal for a range of general purpose applications and is particularly useful for applications involving high current switching, signal conditioning, and power regulation. It is also well-suited to applications in power conversion, amplifiers, low-noise, low-power logic, and static circuit applications.The DN2540N8-G has a wide range of benefits, including its low on-state resistance and its ease of use. It is very reliable and requires minimal maintenance and upkeep. It is also able to operate at a much higher temperature than other types of transistors, making it suitable for higher temperature environments. The DN2540N8-G can also be used in applications requiring fast switching and low power consumption.The DN2540N8-G is a reliable and consistent FET that is particularly useful in a range of applications. It is easy to use, reliable and efficient, making it an ideal choice for those looking for a cost-effective and reliable solution for a range of general purpose applications. The low on-state resistance and high temperature capabilities of the DN2540N8-G make it a particularly attractive and useful device for those who need to switch high current and power regulation solutions.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description