DN2530N8-G Allicdata Electronics

DN2530N8-G Discrete Semiconductor Products

Allicdata Part #:

DN2530N8-GTR-ND

Manufacturer Part#:

DN2530N8-G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microchip Technology
Short Description: MOSFET N-CH 300V 0.2A SOT89-3
More Detail: N-Channel 300V 200mA (Tj) 1.6W (Ta) Surface Mount ...
DataSheet: DN2530N8-G datasheetDN2530N8-G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Rds On (Max) @ Id, Vgs: 12 Ohm @ 150mA, 0V
Vgs(th) (Max) @ Id: --
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.6W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-243AA (SOT-89)
Package / Case: TO-243AA
Description

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DN2530N8-G is a type of advanced MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor). This type of MOSFET is normally used as a high power-switching device, operating in either an on or off state. This type of device has some advantages over traditional silicon BJT (Bipolar Junction Transistor) devices, such as lower capacitance, faster switching speed and higher breakdown voltage.

The DN2530N8-G is a single N-channel MOSFET, which means that it can only be used as an on or off switch. When the MOSFET is “on”, the conductive channel between the drain and the source of the device is opened. This allows current to pass through the device. When the MOSFET is “off”, the channel between the drain and the source of the device is closed, preventing any current from passing through the device.

The DN2530N8-G has a wide range of applications, from low-power switching applications to high-power motor controllers. Some of the most common applications for this type of MOSFET include power supplies, HVAC systems, computer hardware, motor controllers, lighting controls, automotive systems and home appliances.

The working principle of the DN2530N8-G is relatively simple. When a low-power gate voltage is applied to the device, it opens the channel between the drain and source. This allows current to flow through the device. When the gate voltage is removed, the channel between the drain and source is closed, preventing any current from passing through the device. The result is an on or off switch that can be controlled by a low-power gate voltage.

DN2530N8-G devices are typically used in circuits that require high switching speeds and high reliability. This is due to their very low gate capacitance, which helps to minimize the amount of time it takes for the device to switch from an “off” state to an “on” state. Additionally, the low gate capacitance also helps to reduce the amount of power required to drive the device. This makes the DN2530N8-G an ideal choice for high-power switching applications.

In conclusion, the DN2530N8-G is a single N-channel MOSFET used in a wide range of high power-switching applications. It is known for its low gate capacitance, high breakdown voltage and fast switching speed. The DN2530N8-G is typically used in circuits that require high switching speeds and high reliability, such as power supplies, HVAC systems, computer hardware, motor controllers, lighting controls, automotive systems and home appliances.

The specific data is subject to PDF, and the above content is for reference

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