Allicdata Part #: | DN2535N3-G-P013-ND |
Manufacturer Part#: |
DN2535N3-G-P013 |
Price: | $ 0.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N-CH 350V 0.12A TO92-3 |
More Detail: | N-Channel 350V 120mA (Tj) 1W (Tc) Through Hole TO-... |
DataSheet: | DN2535N3-G-P013 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.36338 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 350V |
Current - Continuous Drain (Id) @ 25°C: | 120mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 0V |
Rds On (Max) @ Id, Vgs: | 25 Ohm @ 120mA, 0V |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 25V |
FET Feature: | Depletion Mode |
Power Dissipation (Max): | 1W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92 (TO-226) |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
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DN2535N3-G-P013 are a type of metal-oxide semiconductor field-effect transistor (MOSFET). They are a three-terminal device with a gate, a drain, and a source, and can be used for a wide range of applications.
MOSFETs are considered to be voltage-controlled devices, meaning the current flow through the device can be controlled using voltage signals. To control the device, a voltage is applied to the gate terminal which increases or decreases the conductivity of the channel between the drain and source terminals. MOSFETs can also switch very quickly, making them ideal for high-speed digital and other fast applications.
One common application of the DN2535N3-G-P013 device is as an amplifier. By applying an input voltage to the gate we can control the amount of current flowing through the drain and source. The input voltage controls the conductance of the channel between the drain and source, which in turn controls the output current. This allows the DN2535N3-G-P013 to amplify low-level input signals to higher output levels.
Another application for the DN2535N3-G-P013 is as a switch, controlling the current in a circuit by turning it on or off. When the voltage applied to the gate is high, the current flows freely through the channel between the drain and source. When the voltage is low, the conductance of the channel is decreased and the current through the device is decreased or blocked. This allows the DN2535N3-G-P013 to be used in a wide range of switching applications, from power supplies to logic circuits.
The DN2535N3-G-P013 can also be used as a temperature sensor. In this application, the resistance of the channel between the drain and source varies with temperature which can be measured. As the temperature increases, the resistance of the channel decreases, allowing more current to flow through the device. By measuring the drain current in the DN2535N3-G-P013, an accurate temperature reading can be obtained.
DN2535N3-G-P013 also has other uses such as voltage regulator, electronic timer, switchable conductance and noise suppressor. All these applications make it a versatile device with a wide range of uses.
Overall, the DN2535N3-G-P013 is a versatile MOSFET device with a range of applications. It can be used as an amplifier, a switch, a temperature sensor, a voltage regulator, an electronic timer, and many more. As a result, it is a popular choice for many design engineers, who have the option to use it in their circuit designs.
The specific data is subject to PDF, and the above content is for reference
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