DN2535N3-G

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The DN2535N3-G is a N-Channel logic FET used as a power switch in certain applications. It has an integrated logic level that helps control the switching times when a logic signal is applied to the gate. The device is generally used for low to moderate current switching from DC to the high frequency range, making it a versatile device for many power supply applications.

Applications

The DN2535N3-G is used as a power switch in applications where high-sensitivity switching, low on-resistance and logic level control is desired. The logic level control makes it suitable for use in applications such as personal computers, consumer electronics, automotive systems, and in other light load applications. It is well suited for use in battery charging and other DC applications where its low on-resistance and low gate inductance makes it a cost effective choice. It is also suitable for AC applications where its quiet switching operation is beneficial.

Working Principle

The DN2535N3-G is an N-Channel logic FET that works on the principle of a MOS Field Effect Transistor (MOSFET). This type of transistor operates by applying a voltage to a gate terminal, which creates an electric field that controls the transistor’s resistance. When the gate voltage applied to the DN2535N3-G is above the threshold voltage (Vt), the drain-source current (Id) will start to build up. As the voltage on the gate is increased, the drain-source current will also increase accordingly. The gate can have its voltage quickly changed to achieve fast switching times.

Features and Benefits

The DN2535N3-G offers the user a low on-resistance channel, allowing it to switch low currents with low losses. It also has an integrated logic level that facilitates the connection of a logic signal to the gate of the FET, allowing for fast switching times and a lower loss application. This also enables the use of a lower gate power supply, reducing power consumption. Other features of the device include an ESD protection rating of 8kV, which helps the device to withstand high electro-static discharges, and a high maximum drain current rating of 8A.

Summary

The DN2535N3-G is an N-Channel Logic FET used as a power switch in certain applications. It has an integrated logic level that helps control the FET’s switching times when a logic signal is applied to the gate. It is suitable for use in DC and AC applications, including battery charging and light load applications due to its low on-resistance and low gate inductance. It also features ESD protection and a maximum drain current of 8A.

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