DN2535N5-G

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DN2535N5-G is a field-effect transistor (FET) with an enhancement-mode vertical double-diffused MOSFET structure. It is widely used in power conversion, power supply and current switching circuits. The E-type version of this FET has a higher forward bias stability in the on-state, and maintains better power handling than the drain-to-source voltage (Vds) by reducing the effect of the on-resistance (Ron).

The typical applications of DN2535N5-G include power converters, power supplies, motor controllers, lighting systems, and other current switching circuits. It can also be used in other situations where safe and reliable power conversion and current switching are needed. It can be used in systems with input voltages up to 20V and output currents up to 25A.

The working principle of DN2535N5-G is based on the principles of metal-oxide-semiconductor (MOS) technology. It uses a special construction of the drain and source electrodes to ensure a high transistor gain, which is known as the vertical double-diffused MOS (VDMOS) structure. This is a low-cost alternative to MOSFETs which has been developed for use in power electronics systems.

The VDMOS structure of DN2535N5-G enables the use of a p-type substrate material, which allows for the formation of a low-resistance area surrounding the drain and a high-impedance area around the source. This arrangement allows for a higher breakdown voltage and improved switching characteristics compared to conventional MOSFETs. The VDMOS also allows for better protection against electrostatic damage and improved thermal performance. Additionally, the VDMOS structure also helps to reduce on-resistance by providing a greater contact area between the drain and the source electrodes.

These features make DN2535N5-G an attractive choice for power conversion and current switching applications. Its low on-state resistance, high breakdown voltage, and efficient thermal performance make it ideal for a wide range of power electronic systems. Furthermore, its ability to withstand electrostatic damage makes it more reliable compared to other FETs.

In summary, DN2535N5-G is a field-effect transistor with an enhancement-mode vertical double-diffused MOSFET structure, which makes it suitable for use in power conversion and current switching circuits. It has a low on-state resistance, high breakdown voltage, and efficient thermal performance, and can withstand electrostatic damage. These features make it an ideal choice for many power electronic systems and applications.

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