DN2540N5-G

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The DN2540N5-G power semiconductor device belongs to the field of Transistors - FETs, MOSFETs - Single. This device is developed to provide high power switching and electronic control in applications like power supply, motor control and high current load switching.

The DN2540N5-G is constructed of silicon N-channel MOSFETs, meaning that they can be used to amplify or switch electronic signals. The device is able to operate in normal or enhanced mode and is designed to withstand high current load conditions. It provides an optimal solution to applications requiring low input capacitance and both high-side and low-side current sensing.

The device features a frequency response range of up to 1MHz, with a maximum of 16V for drain-source voltage and a maximum of 110A for drain or source current. Its on-resistance is on the order of 25 mΩ @ 10V, which is extremely low and helps reduce power losses and heating. In addition, it offers fast switching times, with a rise and fall times from 10nS to 5μS. It is also able to operate in temperatures up to 150°C.

The working principle of the DN2540N5-G is fairly simple. The device acts as an electronic switch, allowing the flow of electrons through it when it receives a certain voltage across its gate and source. In its “on” state, the voltage between the drain and source terminals is considered low and thus, the device allows electrons to pass through it. The electrons will then continue on to the drain terminal, completing the electrical circuit.

The DN2540N5-G is ideal for use in high-power switching and control applications that require fast response times, low power consumption, and high current levels. It is also ideal for applications requiring low input capacitance and both high-side and low-side current sensing. The device is also resistant to EMI and RFI interference, making it suitable for use in digital environments.

In summary, the DN2540N5-G is an ideal power semiconductor device for a wide range of applications. It is designed to provide high power switching and electronic control in power supply, motor control and high current load switching. It has a low on-resistance, a wide frequency response range, and fast switching times. In addition, it is both EMI and RFI protected and is suitable for use in temperatures up to 150°C.

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