DRA9114E0L

Resistor - Emitter Base (R2):	10 kOhms
Base Part Number:	DRA9114
Supplier Device Package:	SSMini3-F3-B
Package / Case:	SC-89, SOT-490
Mounting Type:	Surface Mount
Power - Max:	125mW
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	35 @ 5mA, 10V
Series:	--
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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The DRA9114E0L is a single pre-biased, high-performance bipolar transistor specifically designed for use in a variety of general-purpose and high-frequency applicatio0ns. This component is housed in a 4-lead SC-89 package and it offers a wide range of features and benefits, such as low power consumption, high gain and high overload performance. The DRA9114E0L Bipolar Transistor works according to the standard biasing principles for this type of component. When there is no voltage applied to its base terminal, it remains off. This is called the cutoff region. The transistor can be activated and this will turn it to the linear region by applying a voltage at the base terminal. When a voltage is applied, it will create a current in the collector-emitter circuit. This will cause the transistor to “turn on”, allowing current to flow through. The linear region is also referred to as the saturation region. As the applied voltage at the base terminal continues to increase, the current flowing through the transistor will increase. When the current reaches a certain point, the transistor will enter the saturation region and the voltage will level off. This is called the saturation point and it is a voltage that is just slightly lower than the applied voltage at the base terminal. The DRA9114E0L Bipolar Transistor offers excellent characteristics for a wide range of applications. It has a high gain which allows it to be used for switching operations and can deliver high frequencies for signal conditioning. Its low power consumption makes it ideal for many applications such as RF amplifiers, cellular phones and portable applications. It is also suitable for use in IF amplifiers and voltage-controlled oscillators (VCOs). The device is designed with a Darlington connection, which consists of two NPN transistors connected in a close packed configuration. This connection process can achieve a full 200mA current rating, along with an excellent high frequency response. Additionally, the DRA9114E0L Bipolar Transistor offers other features, such as a minimum breakdown voltage of 50V and a low noise figure of 1.6dB. The DRA9114E0L Bipolar Transistor is also suitable for use in high temperature applications. Its maximum rated junction temperature is 175 degrees Celsius. It can also withstand high voltage up to 400V. This makes it suited for use in RF and microwave applications, such as pre-amplifiers, filters and power amplifiers. The DRA9114E0L Bipolar Transistor is an ideal component for a variety of general-purpose and high-frequency applications. It offers a wide range of features and benefits, such as low power consumption, high gain and high overload performance. Additionally, its Darlington connection process allows it to achieve a full 200mA current rating, along with an excellent high frequency response. It is also suitable for use in high temperature applications, making it a versatile component for many projects.

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