DRA9143X0L

Resistor - Emitter Base (R2):	10 kOhms
Base Part Number:	DRA9143
Supplier Device Package:	SSMini3-F3-B
Package / Case:	SC-89, SOT-490
Mounting Type:	Surface Mount
Power - Max:	125mW
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 5mA, 10V
Series:	--
Resistor - Base (R1):	4.7 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction

DRA9143X0L is a single, pre-biased, Bipolar Junction Transistor (BJT) device. DRA9143X0L is a depletion-mode transistors that are specially designed for Ultra-Low Gate-Voltage,high-performance and high-current applications where reliability and performance are crucial. Its excellent design and high-end technology make it an ideal solution for multiple applications in the electronics industry.

Application Field

DRA9143X0L transistors are usually used in a variety of low-noise, low-power, and high-current applications such as audio power amplifiers, active filters, analog switches, push-pull amplifiers and relay circuits. This type of transistors can also be employed in power management systems, power supply circuits, and high-frequency amplifiers. Moreover, DRA9143X0L transistors can be leveraged in motor control circuits for the purpose of efficient and accurate control. Additionally, DRA9143X0L transistors can be found in various automotive, medical and industrial systems that require low-power and high-current functions. Such applications include real-time clocks, temperature sensors, RF transceivers, and other complex circuits. Furthermore, they can also be used in telecommunication systems, navigation systems, and industrial/military systems.

Working Principle

The DRA9143X0L works on the principle of electrical current flow between two terminals, known as the emitter and collector. When the base-emitter junction diode is forward biased, a small current (Ib) flows into the base, whose amplitude is proportional to the voltage applied to the base. Ib causes a proportional increase in the collector current (Ic). This relationship is known as the current gain and is given by the expression, HFE or Alpha (α). The current gain is affected by the base current and can be increased or decreased by altering it.The current gain of a BJT transistor is determined by its characteristics namely, the base current, collector current, and emitter current. As the base current increases, the collector current also increases, while the emitter current decreases. The relationship between the collector current and the base current is known as the transconductance (gm). The increased current gain of the DRA9143X0L is mainly due to its reduced noise characteristics. This makes it more reliable in applications where high-current and low-noise is required.

Conclusion

The DRA9143X0L is an ideal choice when it comes to low-power and high-current applications. Its excellent design and high-end technology make it an excellent choice for a variety of applications, ranging from motor control circuits to real-time clocks and temperature sensors. Moreover, its reduced noise characteristics make it a great choice for applications that require low-noise and high-current functions.

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