Allicdata Part #: | DRA9124T0LTR-ND |
Manufacturer Part#: |
DRA9124T0L |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA9124T0L Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05584 |
6000 +: | $ 0.05274 |
15000 +: | $ 0.04809 |
30000 +: | $ 0.04499 |
75000 +: | $ 0.04137 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3-B |
Base Part Number: | DRA9124 |
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The DRA9124T0L is a single pre-biased bipolar junction transistor (BJT) designed for use in a variety of applications. It is a versatile and reliable transistor that can be used in a wide range of applications that require high power, low noise and low distortion. The DRA9124T0L is one of the most popular types of transistors used in the electronics industry, with a wide range of applications including switching, amplifying and regulating signals.
The DRA9124T0L utilizes a p-type base, a n-type emitter and collector region, and a p-n junction between the p-type base and n-type emitter and collector. This arrangement of the regions is what gives the DRA9124T0L its pre-biased characteristics. The pre-biasing of the DRA9124T0L is a process whereby the base-emitter and base-collector junctions are forward biased in order to reduce the current necessary for the transistor to work properly. This reduces the power consumption and increases efficiency. As a result, the DRA9124T0L can operate with a low level of control current, and is ideal for use in devices that require both high power and low distortion.
The DRA9124T0L can be used in a variety of applications due to its wide range of operating parameters. It is commonly used in automobile electronics and power supplies, as well as audio amplifiers, radio sets, and cellular transmitters. As an audio amplifier, the DRA9124T0L is capable of delivering high quality, low distortion audio signals. As a radio transmitter, it is able to deliver low power radio signals with a high degree of fidelity. In cellular transmitters, the DRA9124T0L is used to generate low power transmit signals with low power consumption and low noise. These signals can then be used to send data and voice both over short and long distances.
The DRA9124T0L is also used to generate temperature signals in a variety of devices, such as heaters and refrigerators. By utilizing p-n junctions and its pre-biased characteristics, the DRA9124T0L is able to accurately detect and report temperature levels in a device. Additionally, the DRA9124T0L can be used in a number of other applications, such as switches, relays and variable speed motor drives.
The working principle of the DRA9124T0L is relatively simple. When a small amount of current is applied to the base of the transistor, it increases the current between the emitter and collector terminals. This increase of current is known as amplification, and it is what allows the transistor to act as a switch. By controlling the current applied to the base, it\'s possible to control the amount of current flowing between the emitter and collector terminals, thus controlling the operation of any device that is connected to the transistor.
The DRA9124T0L is an excellent choice for a variety of applications, due to its versatility and low power consumption. Its pre-biased characteristics allow it to operate efficiently and accurately in a wide range of applications, from audio amplifiers to cellular transmitters. The DRA9124T0L is a reliable and robust transistor that is well suited for use in a variety of electronic circuits.
The specific data is subject to PDF, and the above content is for reference
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