DRA9143E0L Allicdata Electronics

DRA9143E0L Discrete Semiconductor Products

Allicdata Part #:

DRA9143E0LTR-ND

Manufacturer Part#:

DRA9143E0L

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DRA9143E0L datasheetDRA9143E0L Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05584
6000 +: $ 0.05274
15000 +: $ 0.04809
30000 +: $ 0.04499
75000 +: $ 0.04137
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3-B
Base Part Number: DRA9143
Description

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The DRA9143E0L is a single pre-biased transistor operating in the NPN (negative-positive-negative) polarity configuration. It is primarily used in electronic circuitry applications, such as amplifiers and switches, where the device is required to operate based on the current it draws from the emitter and collector, as opposed to its traditional base-emitter-collector configuration.

From the switching and amplifying perspective, the DRA9143E0L is an ideal device; it offers quick turn-on and off times, allowing for quicker, more efficient operation. In addition, due to its pre-biased state, the device provides a very low level of current leakage and low voltage build-up, thereby reducing power consumption.

In terms of working principle, the DRA9143E0L operates by utilizing an active-region reverse biasing technique. This technique allows for the DRA9143E0L to be powered by an electrical current passing from the emitter to the collector. The resulting current in the active region of the transistor is exploited to propagate the current from the emitter to the collector. Once the current has safely reached the collector, the device is then shut off by the reverse biasing technique.

This makes the DRA9143E0L a powerful device for a variety of applications, such as in voltage regulation, current switching, and amplification. In addition, due to its low current leakage, it is also often used in automotive applications, since it is able to provide high voltage switching without drawing excessive current.

The DRA9143E0L is an easy to use device, not requiring much established knowledge on the part of the user. Furthermore, as a pre-biased transistor, the DRA9143E0L does not require the additional circuitry that typically accompanies a traditional base-emitter-collector transistor. This makes the DRA9143E0L simpler to install and considerably less expensive.

The specific data is subject to PDF, and the above content is for reference

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