DRA9143E0L Discrete Semiconductor Products |
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Allicdata Part #: | DRA9143E0LTR-ND |
Manufacturer Part#: |
DRA9143E0L |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA9143E0L Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05584 |
6000 +: | $ 0.05274 |
15000 +: | $ 0.04809 |
30000 +: | $ 0.04499 |
75000 +: | $ 0.04137 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3-B |
Base Part Number: | DRA9143 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DRA9143E0L is a single pre-biased transistor operating in the NPN (negative-positive-negative) polarity configuration. It is primarily used in electronic circuitry applications, such as amplifiers and switches, where the device is required to operate based on the current it draws from the emitter and collector, as opposed to its traditional base-emitter-collector configuration.
From the switching and amplifying perspective, the DRA9143E0L is an ideal device; it offers quick turn-on and off times, allowing for quicker, more efficient operation. In addition, due to its pre-biased state, the device provides a very low level of current leakage and low voltage build-up, thereby reducing power consumption.
In terms of working principle, the DRA9143E0L operates by utilizing an active-region reverse biasing technique. This technique allows for the DRA9143E0L to be powered by an electrical current passing from the emitter to the collector. The resulting current in the active region of the transistor is exploited to propagate the current from the emitter to the collector. Once the current has safely reached the collector, the device is then shut off by the reverse biasing technique.
This makes the DRA9143E0L a powerful device for a variety of applications, such as in voltage regulation, current switching, and amplification. In addition, due to its low current leakage, it is also often used in automotive applications, since it is able to provide high voltage switching without drawing excessive current.
The DRA9143E0L is an easy to use device, not requiring much established knowledge on the part of the user. Furthermore, as a pre-biased transistor, the DRA9143E0L does not require the additional circuitry that typically accompanies a traditional base-emitter-collector transistor. This makes the DRA9143E0L simpler to install and considerably less expensive.
The specific data is subject to PDF, and the above content is for reference
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