DRA9123J0L Allicdata Electronics

DRA9123J0L Discrete Semiconductor Products

Allicdata Part #:

DRA9123J0LTR-ND

Manufacturer Part#:

DRA9123J0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DRA9123J0L datasheetDRA9123J0L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3-B
Base Part Number: DRA9123
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DRA9123J0L is a robust, pre-biased single-cell dc-dc converter designed for low-power applications. It has a tiny 2.15 x 2.15-mm QFN package and an operating temperature range of -40°C to +105°C. The DRA9123J0L is ideally suited for civil and automotive applications.

The DRA9123J0L uses a buck-boost switching converter to achieve stable performance over a wide input voltage range. It operates in two modes-boost and buck-and can maintain a regulated output voltage within 1% of the set point. The device supports current mode control with fixed switching frequency up to 1.2 MHz. The device has a 0.6 μA low quiescent current, making it highly efficient and suitable for battery-powered applications.

The device includes a wide 4.5V to 28V operating input voltage range, enabling it to easily manage a wide range of voltage spikes, reversals, and transients. The DRA9123J0L also features load advanced features, such as over-current protection, overtemperature protection, and adjustable output voltage, making it highly adaptable for a range of applications.

The working principle of the device is based on the electrically reversible two-port BJT single-transistor circuit. When the transistor is forward-biased, it conducts current between the emitter and collector, forming what is known as the forward-biased diode (FBD) or the high-side diode. When the transistor is reverse-biased, it behaves as a closed-switch and does not conduct current. This allows the DRA9123J0L to have low on-state resistance and high input impedance.

The DRA9123J0L is highly suitable for a variety of low-power applications, such as mobile phones, cameras, and other small electronic products. Its wide range of features, ultra-low quiescent current, and robust operation, makes it ideal for a range of low-power applications.

The specific data is subject to PDF, and the above content is for reference

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