DRA9115E0L Discrete Semiconductor Products |
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Allicdata Part #: | DRA9115E0LTR-ND |
Manufacturer Part#: |
DRA9115E0L |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA9115E0L Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04882 |
6000 +: | $ 0.04394 |
15000 +: | $ 0.03905 |
30000 +: | $ 0.03662 |
75000 +: | $ 0.03255 |
Resistor - Emitter Base (R2): | 100 kOhms |
Base Part Number: | DRA9115 |
Supplier Device Package: | SSMini3-F3-B |
Package / Case: | SC-89, SOT-490 |
Mounting Type: | Surface Mount |
Power - Max: | 125mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 100 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DRA9115E0L from Infineon Technologies is one of the most versatile single, pre-biased Bipolar Junction Transistors (BJT). It is designed for the development of power amplifiers, RF amplifiers, RF mixers, and RF voltage controlled oscillators.
The key elements of the DRA9115E0L are the collector-emitter voltage and the collector-base voltage. These two voltages are the main factors in determining the power output and gain of the BJT. The typical collector-emitter voltage for the DRA9115E0L is 5V, and the typical collector-base voltage is 6V.
The DRA9115E0L is a NPN type transistor. It has a base, an emitter, and a collector. All of these parts are connected internally by the device\'s resistors and capacitors. The collector and base are the two parts that are exposed to the external circuit. As current flows between the base and collector, it creates the electric field necessary for the transistor to operate.
The DRA9115E0L also has an internal biasing network. This biasing network ensures that the collector current and the collector-emitter voltage remain constant, regardless of the load conditions in the external circuit. This helps to increase the efficiency of the BJT, as more power is delivered to the load.
The DRA9115E0L can be used in a variety of applications. It is commonly used to construct RF amplifiers and voltage controlled oscillators. In RF amplifiers, it is used to convert high-frequency signals into more useable low-frequency signals. In voltage controlled oscillators, it is used to create a signal whose frequency is controlled by a voltage source.
In addition to its electrical performance, the DRA9115E0L also has some physical features. It has a package size of 5mm by 3mm, and is rated for temperatures up to 150°C. It also has a low noise figure of 21 dB.
The DRA9115E0L is an ideal choice for developers of electronic circuits. Its pre-biased design and wide voltage range make it suitable for many applications. Its low-temperature rating and low noise figure also make it a reliable component.
The specific data is subject to PDF, and the above content is for reference
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