DRA9144E0L Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DRA9144E0L is a single, pre-biased Bipolar Junction Transistor (BJT) available in an industry-standard 2.0 mm x 1.25 mm x 0.9 mm footprint. It is a three-terminal NPN transistor, specifically designed for applications requiring exceptional high-frequency performance, very low noise and low current consumption, such as WLAN, Bluetooth and Zigbee applications.

The DRA9144E0L is a pre-biased configuration, with built-in optimized current, voltage and temperature characteristics that allow it to operate in low-power applications. It features precalculated current and temperature coefficients to simplify design and minimize engineering time. The device uses a patented dynamic biasing scheme to ensure that the desired dynamic current gain, hfe, is always maintained and that the output impedance is kept low.

The DRA9144E0L features an optimized package design, balanced with tight layout constraints, which makes it ideal for high-density, high-performance circuits. The device is also resistant to electromagnetic interference (EMI) and has built-in heat dissipation which allows it to operate up to 85°C. It is compatible with most standard PCBs and packages.

The DRA9144E0L is a three-terminal NPN transistor, specifically intended for WLAN, Bluetooth and Zigbee applications. The device\'s three terminals are labeled “Collector”, “Base”, and “Emitter”. It is a pre-biased device, which means that the Collector and Base terminals are already considered to be connected, with a predetermined current flowing through them as if a voltage were applied. The Emitter terminal is disconnected from the Collector prior to device operation; when a voltage is applied, the base current controls the amount of current flowing between the Collector and Emitter terminals.

The DRA9144E0L is designed to provide exceptional high-frequency performance, very low noise, and low current consumption. It has optimized current and temperature characteristics, which enable it to be used in low-power applications. The device is resistant to electromagnetic interference (EMI) and can operate up to 85°C. In addition, it has a patented dynamic biasing scheme that ensures that the desired dynamic current gain, hfe, is always maintained and that the output impedance is kept low.

The DRA9144E0L is used in a variety of applications, such as power converters and regulators, low-noise amplifiers, RF transmitters and receivers, cellular base stations, WLAN, Bluetooth and Zigbee systems, and medical electronics. These applications benefit from the device\'s exceptional high-frequency performance, low noise, and low current consumption.

The specific data is subject to PDF, and the above content is for reference