DRA9123Y0L Allicdata Electronics

DRA9123Y0L Discrete Semiconductor Products

Allicdata Part #:

DRA9123Y0LTR-ND

Manufacturer Part#:

DRA9123Y0L

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DRA9123Y0L datasheetDRA9123Y0L Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05584
6000 +: $ 0.05274
15000 +: $ 0.04809
30000 +: $ 0.04499
75000 +: $ 0.04137
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3-B
Base Part Number: DRA9123
Description

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The DRA9123Y0L is a single, pre-biased, bipolar junction transistor (BJT) commonly used in electronic circuits. This particular device is designed to be used in a variety of applications, and it stands out for being particularly effective when dealing with power delivery. As its name implies, it comes with a pre-biased configuration, so for most applications, users will not need to configure the device any further.The DRA9123Y0L is a discreet NPN BJT device, which means it is composed of two polar, doped semiconductor materials which are placed next to each other. The device consists of a three-layer base of N-type materials which form two junctions—the Base-Emitter junction, and the Base-Collector junction. The main function of the device is to control the current flow in the circuit, with the Base-Emitter junction acting as a switch to regulate the current between the emitter and the collector.The pre-biased configuration of the DRA9123Y0L makes it an ideal device for power applications. This is because it is capable of running at high voltages while still providing accurate control of the current. As such, it is a popular choice for applications such as amplifying audio signals in power amplifiers, voltage regulation and motor control circuits.The working principle of the DRA9123Y0L is fairly simple. When a small amount of current is supplied at its Base-Emitter junction, it will switch on the transistor, allowing a current to flow from the Emitter to the Collector. This current will increase as the Base-Emitter voltage increases, up to the point where the device can no longer control the flow of current. This is known as the Saturation voltage, which is the maximum voltage at which the DRA9123Y0L can operate effectively.When the DRA9123Y0L is used in circuits, the operating voltage should never exceed the Saturation voltage, as doing so could lead to the device being permanently damaged. Additionally, it is important to note that the device must be protected from reverse-voltage surges, as otherwise it can be destroyed.In conclusion, the DRA9123Y0L is a single, pre-biased BJT device designed for a variety of applications, in particular, power applications. The working principle of the device is fairly straightforward, and it is designed to operate with a maximum Saturation voltage to protect it from being permanently damaged. When used correctly, the DRA9123Y0L can be a reliable and effective device for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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