DRA9123E0L Discrete Semiconductor Products

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TheDRA9123E0L is a single, pre-biased bipolar transistor (BJT) specifically designed for a wide range of applications. It is manufactured with a patented lateral NPN collector, which enables it to perform in high frequency switching and scaling applications. The DRA9123E0L has a built-in 100% saturation current stability, making it the ideal choice for applications requiring fast switching, small voltage drops, and low power consumption.

The DRA9123E0L features a high-current gain of 2000, a high-output impedance of 400mV for frequency response and a very low-impedance output for linear applications. Its built-in collector configuration provides unmatched current gain, allowing a high-current flow at very low input current levels. Additionally, the simple and reliable connection of source and emitter makes it more efficient in comparison to other BJTs.

The operating environment of the DRA9123E0L is highly stable, allowing it to run at temperatures of up to 125°C. The advantages of this product include good correlation of electrical performance with temperature and good stability in operation. Additionally, its high withstand voltage of 200V CS allows this device to operate in harsh environmental conditions, and its VEO-leveling process enables the pre-biased (VBB) output voltage to be maintained within the specified range.

The DRA9123E0L is designed for use in drivers and Oscillators, high power drivers, fan controllers, speed controls and engine controllers. It is also suitable for general purpose switching and signal conversion applications. The DRA9123E0L is available in surface mount package (SOT) or traditional through-hole package and is offered in bulk, tape and reel, or strip form.

The DRA9123E0L works on a principle called “bias and switch”. This device uses a small base current to create a larger collector current, which is then directed to the output, allowing it to switch between states while remaining pre-biased at a given voltage. The device is activated by the base voltage, and the value of the collector current is determined by the base current. By providing a voltage at the emitter, a higher collector current flow can be secured, allowing the device to switch faster.

The working principle of the DRA9123E0L also includes a variation of the bias and switch technique, called the H-Bridge. This technique, which is suitable for operating at higher frequency levels, uses two transistors to control the voltage at the output in both forward and reverse directions. The base and collector current of one transistor switch, creating an inverse voltage at the output, while the other transistor does the exact opposite to keep the output current in balance.

Overall, the DRA9123E0L is a single, pre-biased bipolar transistor ideal for many applications demanding fast switching, small voltage drops and low power consumption. Its built-in collective configuration allows the device to function with the highest current at low input levels, while the H-bridge technique ensures stability of the output voltage in both forward and reverse directions. Additionally, its VEO-leveling process ensures that the output voltage is maintained within the specified range, making it the perfect choice for a variety of applications.

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