DRA9143Y0L Discrete Semiconductor Products

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The DRA9143Y0L is a pre-biased, single bipolar junction transistor (BJT) comprised of a single NPN transistor in a DIP package. As a pre-biased device, the DRA9143Y0L contains two base-emitter resistors that are integrated into the package and are ready for use without additional external components. The two resistors, specifically RBE1 and RBE2, provide a current gain of approximately 150, allowing the device to operate at low current levels.

The integrated resistors also reduce power dissipation, especially when the device is driving a large load. In addition, the DRA9143Y0L contains an internal diode that can be used as an emitter-follower output for complementary logic functions. This diode structure makes the DRA9143Y0L well-suited for use in transient-suppression and temperature-compensated circuits.

The DRA9143Y0L is used primarily in applications such as active filters, linear amplifiers, high speed modulators, and current sources. In addition, due to its small size and low power dissipation, it can be used as a general purpose NPN transistor for various other applications. As with all single BJT transistors, the DRA9143Y0L has three terminals: a base, an emitter, and a collector. It operates on the principle of injection of minority carriers, meaning that the base terminal acts as a negative electron gate in order to inject free electrons into the collector region. This process produces a current flow from the collector to the emitter, allowing the device to function as an amplifier.

Specifically, voltage applied to the base will cause the current flow between the emitter and collector to increase, while simultaneously increasing the voltage drop across the collector and emitter resistors. This voltage drop, in turn, causes more current to flow through the collector-emitter junction, increasing the device’s gain. As a pre-biased BJT device, the DRA9143Y0L also exhibits noise-free switching performance, which makes it well-suited for logic-level electrical applications.

The DRA9143Y0L is a single transistor which has been designed with an internal current gain of approximately 150 and an integrated diode for complementary logic functions. Its Internal resistors reduce power dissipation, making it ideal for active filter, linear amplifier, high speed modulator and current source applications. This device can also be used as a general purpose NPN transistor, thanks to its small size and low power dissipation.

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