DRA9152Z0L Discrete Semiconductor Products |
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Allicdata Part #: | DRA9152Z0LTR-ND |
Manufacturer Part#: |
DRA9152Z0L |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA9152Z0L Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05584 |
6000 +: | $ 0.05274 |
15000 +: | $ 0.04809 |
30000 +: | $ 0.04499 |
75000 +: | $ 0.04137 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 510 Ohms |
Resistor - Emitter Base (R2): | 5.1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3-B |
Base Part Number: | DRA9152 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DRA9152Z0L is a single, pre-biased bipolar junction transistor (BJT) which offers several advantages when integrated within an electrical circuit. Such transistors are ultra-small compared to their standard counterparts, making them ideal for space-restricted applications where high frequency capabilities are required. The pre-biasing feature ensures that the device remains in the optimal conditions for performance, and the current gain of the device is adjustable so that the output can be precisely controlled. This makes the DRA9152Z0L particularly suitable for use in audio and RF circuits, as well as power amplifiers.
The DRA9152Z0L can operate over a wide range of temperatures, from -55°C to +150°C, and is designed for use in tight spaces thanks to its ultra-small 2-Ball MLP hermetic-style package. The device additionally features a rugged leadframe construction and high packing density, making it extremely reliable in extreme conditions. The low power consumption and tight gain error bands of the device ensure high-performance operation, while its high-current carrying capabilities make it suitable for many power amplifiers.
The primary working principle of the DRA9152Z0L lies in its ability to control the flow of voltage and current between two junctions, the emitter and the collector. This occurs when a bias voltage is applied across the base-emitter junction, which allows electrons to flow from the emitter to the collector when a current is passed through the control base. The resulting current gain typically lies around 200, indicating that the output current is around 200 times greater than the input current. This makes the DRA9152Z0L ideal for rising and falling slopes, and high-speed switching applications.
The DRA9152Z0L is an excellent choice for audio and RF circuits, as well as automotive, telecom, and computing-related applications. Its low power consumption, miniature package size, and high current carrying capabilities make it ideal for power amplification projects. Additionally, its gain control features and high-performance operation make it suitable for complicated circuits and switching applications.
The specific data is subject to PDF, and the above content is for reference
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