DRA9144W0L Allicdata Electronics
Allicdata Part #:

DRA9144W0LTR-ND

Manufacturer Part#:

DRA9144W0L

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DRA9144W0L datasheetDRA9144W0L Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05584
6000 +: $ 0.05274
15000 +: $ 0.04809
30000 +: $ 0.04499
75000 +: $ 0.04137
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3-B
Base Part Number: DRA9144
Description

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A DRAM9144WOL is a pre-biased single bipolar junction transistor often used in high-power electronic applications. It is typically used in amplifiers, voltage regulators and switching circuits, which require a large amount of current to be switched. Its properties make it an ideal choice for applications requiring linear operation with low voltage drop, high reliability, and minimal power dissipation.

As with other BJT devices, a DRAM9144WOL comprises three main components: the base, the collector, and the emitter. The junction between the collector and the base is the main active region, where current flows from the collector to the base when the transistor is being forward-biased. This relationship is commonly referred to as the transistor’s active mode. In this mode, the base-emitter junction is forward-biased, allowing electrons to flow into the base region.

The DRAM9144WOL features a built-in resistor in its base-emitter junction, which helps to reduce the transistor’s power dissipation by limiting the current flow. This feature, known as the Pre-Biased feature, is especially useful in applications that require the output voltage to remain the same regardless of the operating voltage. It also allows for a greater temperature range of operation, making it suitable for high-power applications.

In addition to its power dissipation limiting capabilities, the DRAM9144WOL also comes with other features that improve its reliability and performance. These include an improved thermal safety feature, an improved power density and a greater immunity to electrical noise. This makes it the ideal transistor for applications that involve high-power operation, such as power amplifiers, voltage regulators and switch circuits.

The DRAM9144WOL is also well suited for applications requiring a high current capacity, such as motors and relays. Its high input/output voltage ratings can handle loads of up to up to 40V, making it suitable for a wide range of applications. It also offers excellent reverse-recurrent protection, making it particularly suitable for high-power switching applications.

Overall, the DRAM9144WOL is a pre-biased single bipolar junction transistor that offers a good combination of features and performance. Its power-dissipation limiting capabilities, improved reliability and high-power ratings make it an ideal choice for applications requiring high-power operations. Its low voltage drop, improved temperature range of operation, and improved noise immunity also make it an attractive choice for many other applications.

The specific data is subject to PDF, and the above content is for reference

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