Allicdata Part #: | DRC9114E0LTR-ND |
Manufacturer Part#: |
DRC9114E0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DRC9114E0L Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3-B |
Base Part Number: | DRC9114 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DRC9114E0L is a single, pre-biased, bipolar (BJT) transistor which is used in a wide range of application fields, due to its unique design.
In comparison to other BJT transistors offered on the market, the DRC9114E0L presents distinct advantages for industrial, automotive and audio applications. For example, its pre-biased nature allows for applications in relays, lamps and opto couplers, which require a low power activation current, while its wide voltage range makes it suitable for applications which require fast switching and improved immunity to electrostatic discharges.
The DRC9114E0L consists of two main components, the collector and the emitter, which are connected together. The base terminal of the transistor is connected to an external source of current, providing the necessary current to activate the transistor. This current is usually referred to as the base drive current, which is determined by the power rating of the device.
When the base drive current is applied, the electrical charge, which is stored in the collector, is pushed out by the current flowing through the transistor. As a result, the collector-emitter current passes through the transistor, creating a voltage drop between the emitter and the collector. This voltage drop is what is referred to as the forward bias of the transistor, and is responsible for the triggering of the current that flows through the device.
Additionally, the DRC9114E0L transistor has a reverse bias capability, meaning that it can be used to provide a low-voltage current to the collector, allowing for better control of the collector-emitter current. This feature is particularly useful in applications which require a low-voltage drive current in order to operate.
Due to its high power rating and its pre-biased design, the DRC9114E0L is an ideal choice for reliable and efficient applications, such as work and hobby electronics, automotive components and audio applications. Its distinct capabilities make it one of the most versatile and reliable transistors on the market.
The specific data is subject to PDF, and the above content is for reference
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