DRC9144W0L

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	47 kOhms
Resistor - Emitter Base (R2):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	125mW
Mounting Type:	Surface Mount
Package / Case:	SC-89, SOT-490
Supplier Device Package:	SSMini3-F3-B
Base Part Number:	DRC9144

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The DRC9144W0L is a single, pre-biased, bipolar junction transistor (BJT), used in many industrial applications. It is a four layer, NPN transistor developed for high speed switching, high frequency drive, power switching, and low voltage gain. This device has exceptional power handling capability and has found a great application field in plastic reactors, microwave ovens, electric space heaters and forced-air blowers.The DRC9144W0L consists of four layers. The first is the base layer which consists of a semiconductor material such as silicon or germanium. This layer is responsible for the current conduction between the collector and the emitter. The second layer is the emitter layer which consists of a thin layer of an appropriate material such as copper. The emitter layer is responsible for controlling the flow of electrons from the collector to the base layer. The third layer is the collector layer which is also made of an appropriate material such as copper. It is responsible for the current flow from the emitter to the base layer. The fourth layer is the shielding layer which consists of a shield material that blocks the transfer of electrons between the collector and the emitter.The DRC9144W0L is a pre-biased transistor, meaning that it is pre-programmed to produce a certain output at a given input. This programming makes it ideal for applications that require precise control over the output. It also allows for the transistors to be more reliable and faster than other transistors.The working principle of the DRC9144W0L is based on a basic transistor behavior. When forward-biased with a positive voltage, the collector-emitter junction allows current to flow from the collector to the base, hence causing a base-emitter current. When reverse-biased, no current flows between the collector and the base, so the current between the collector and the emitter will cease. This transistors feature low voltage gain and power handling capability, allowing it to be used in applications where high speed switching and power switching are required.The DRC9144W0L is also popular in applications such as motor control, power sensing, rectification, energy conversion, audio amplification and switching circuits. The transistor is able to amplify the current due to its high speed switching characteristics, allowing it to be used in very precise low voltage applications. Additionally, its low voltage gain and power handling capability, give it an edge over other transistors when it comes to energy conversion, manipulation and control.In conclusion, the DRC9144W0L is a single, pre-biased bipolar junction transistor, which offers low voltage gain and power handling capability. This makes it ideal for all kinds of industrial applications. From motor control, to power sensing, rectification, and energy conversion, the DRC9144W0L is the ideal transistor for those who are interested in precise low voltage applications.

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