DRC9123E0L Discrete Semiconductor Products |
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Allicdata Part #: | DRC9123E0LTR-ND |
Manufacturer Part#: |
DRC9123E0L |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DRC9123E0L Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04882 |
6000 +: | $ 0.04394 |
15000 +: | $ 0.03905 |
30000 +: | $ 0.03662 |
75000 +: | $ 0.03255 |
Resistor - Emitter Base (R2): | 2.2 kOhms |
Base Part Number: | DRC9123 |
Supplier Device Package: | SSMini3-F3-B |
Package / Case: | SC-89, SOT-490 |
Mounting Type: | Surface Mount |
Power - Max: | 125mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 6 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DRC9123E0L pre-biased single bipolar junction transistor (BJT) is a semiconductor device that is used in various applications such as amplification, switching, and power conversion. This transistor can be used to control the current flow between two terminals by means of its three layers, or junctions.
The P-type semiconductor layer on the top of the device\'s structure forms the collector region. An N-type layer forms the base region and an N+ layer forms the emitter region. During operation, current flows between the emitter and collector terminal through the base region. This flow can be regulated by applying a control voltage to the base layer.
This transistor is one of the more efficient BJTs available due to its base-emitter junction being pre-biased to the forward direction by connecting the N-layer to the base terminal and the P-layer to the emitter terminal. This means that it requires fewer electrons to reach the P-layer and less energy is wasted on recombination losses. A common use of the DRC9123E0L is in power conversion, where it can be used to change AC power into DC power. It can also be used in voltage-controlled switches, where a current is switched on or off depending on the amplitude of an input signal.
The DRC9123E0L can also be used in amplification applications such as satellite television. Here, it is used as a single-stage amplifier to increase the power of an input signal and convert it into a larger output signal. The gain of the amplifier is controlled by the voltage applied to its base. A higher voltage leads to a higher gain, allowing the amplifier to boost the signal even further.
In addition to its many uses in power conversion and amplification, the DRC9123E0L can also be used as a switch, where it is used to control the current flowing between two terminals. This is done by applying a voltage to the base layer. When the voltage is high enough, the current will flow from the emitter to the collector. Conversely, when the voltage is low, the current will be cut off.
In conclusion, the DRC9123E0L pre-biased single bipolar junction transistor is a versatile and highly efficient semiconductor device that can be used for a variety of applications. It is used in power conversion, amplification, and switching applications, which makes it a valuable and highly sought-after component in the electronics industry.
The specific data is subject to PDF, and the above content is for reference
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