Allicdata Part #: | DRC9114W0LTR-ND |
Manufacturer Part#: |
DRC9114W0L |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DRC9114W0L Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04882 |
6000 +: | $ 0.04394 |
15000 +: | $ 0.03905 |
30000 +: | $ 0.03662 |
75000 +: | $ 0.03255 |
Resistor - Emitter Base (R2): | 4.7 kOhms |
Base Part Number: | DRC9114 |
Supplier Device Package: | SSMini3-F3-B |
Package / Case: | SC-89, SOT-490 |
Mounting Type: | Surface Mount |
Power - Max: | 125mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.The DRC9114W0L is a high performance, low power, single-bipolar, pre-biased NPN chip. It is an advanced process technology designed for accelerated performance in both digital and analog designs. This chip is suitable for use in amplifier, switching, and Gaseous Protection System (GPS) applications. It is also an ideal choice for mobile and battery powered applications.
The DRC9114W0L is composed of a pre-biased NPN bipolar junction transistor (BJT), which is pre-biased to enhance speed, reduce power consumption, and improve stability. The chip consists of a handling die and a guard ring that provides an additional level of ruggedness. It has a maximum power dissipation of 35 mW. The chip is fabricated with spiral inductors to provide an enhanced wireless power transfer efficiency.
The working principle of the DRC9114W0L is based on BJT. It has three terminals; base, collector and emitter. The current flow through the transistor follows the directions of the current flow. When the base receives current, current will flow in the middle of the base and collector. If a negative voltage is given to the base terminal, the emitter current is increased. This increased emitter current will flow into the collector side and reduce collector current. The ratio of the emitter current and collector current is known as the current gain of the BJT.
The application field of the DRC9114W0L is pretty wide. It can be used in various applications. It is widely used in communications, RF circuits, power supplies, clocks, and more. It is also used in amplifiers, switching regulators, Gaseous Protection System (GPS), frequency synthesizers, active filters, motor control circuits, and waveform generators. It can also be used for automotive applications, medical instrumentation, and robotics.
In conclusion, the DRC9114W0L is a single-bipolar, pre-biased NPN transistor, developed for a wide range of applications. It consists of a handling die and a guard ring, which provides additional ruggedness. It is suitable for use in amplifier, switching, and Gaseous Protection System (GPS) applications. The working principle of the DRC9114W0L is based on a BJT and the ratio of the emitter current and collector current is known as the current gain of the BJT. The application field of the DRC9114W0L is quite wide and it is used in many communication and power supply applications.
The specific data is subject to PDF, and the above content is for reference
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