DRC9124E0L Discrete Semiconductor Products |
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Allicdata Part #: | DRC9124E0LTR-ND |
Manufacturer Part#: |
DRC9124E0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DRC9124E0L Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3-B |
Base Part Number: | DRC9124 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DRC9124E0L is a type of single-pole, pre-biased transistor. Pre-biased transistors are used for a variety of applications, including amplifiers, voltage regulators, and logic switches. This type of transistor has a slightly different structure than other single-pole transistors, as it has two circuit terminals that already have a predetermined voltage on them. This predetermined voltage can be used to reduce the voltage applied to the base of the transistor, allowing the chip to stay in a single-pole state more easily.
The DRC9124E0L transistor consists of a base layer and an emitter layer. On the base layer, there are two terminals, one connected to the base of the transistor and the other connected to an external circuit. These two terminals also form a bipolar junction, with the base connected to a reference voltage and the other connected to either a pre-biased voltage or the external circuit. In this way, when no current flows or bias voltage is applied, the collector-emitter terminal is already at the predetermined voltage the transistor is pre-biased to.
The DRC9124E0L also has a collector-base junction. This junction acts as a controllable switch, allowing current or no current to flow between the collector and the base. When current is allowed to flow, it will cause the collector-emitter junction to become either positive or negative, depending on the direction of the current. This will then cause current to flow through the collector-emitter junction, thereby allowing the transistor to be in the on state.
Another important aspect of the DRC9124E0L is its high-gain characteristics. This transistor can achieve high gains while still maintaining its current gain, making it a better choice for applications that require a great deal of amplification. The high-gain of the chip also makes it more resilient to noise, ensuring that it is able to stay on and off without great distortion.
The DRC9124E0L transistor is also known for its low power dissipation. This allows it to be used in applications where low power consumption is important, such as portable electronics. Additionally, the DRC9124E0L is also low-profile and has very small leads, making it a great choice for designs that require tight quarters.
Overall, the DRC9124E0L transistor is a great choice for applications where high gains and low power dissipation are important. It is especially useful in applications that require tight quarters and need to remain on without too much distortion. Additionally, its pre-biased structure allows it to reduce the voltage applied to the base of the transistor, allowing the chip to stay in a single-pole state more easily. All in all, the DRC9124E0L is a great choice for an array of applications.
The specific data is subject to PDF, and the above content is for reference
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