DRC9124X0L Allicdata Electronics

DRC9124X0L Discrete Semiconductor Products

Allicdata Part #:

DRC9124X0LTR-ND

Manufacturer Part#:

DRC9124X0L

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DRC9124X0L datasheetDRC9124X0L Datasheet/PDF
Quantity: 6000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.04882
6000 +: $ 0.04394
15000 +: $ 0.03905
30000 +: $ 0.03662
75000 +: $ 0.03255
Stock 6000Can Ship Immediately
$ 0.06
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Base Part Number: DRC9124
Supplier Device Package: SSMini3-F3-B
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Power - Max: 125mW
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Series: --
Resistor - Base (R1): 22 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DRC9124X0L is a single pre-biased bipolar junction transistor (BJT) device. It is an integrated component with two p-type semiconductor materials sandwiched between an n-type material which acts as a base. Such transistors are used in applications where high voltage, low current and/or high power must be handled in a reliable manner.

It is manufactured based on advanced lithography processes to ensure high frequency performance and is well-suited for both analog and digital applications. The DRC9124X0L is widely used for a variety of applications such as switching, amplifying, protection circuits, drive circuits, and interface circuits.

The fundamental operation of bipolar transistors is based on the principle that when a current flows through the base region, it will cause a larger current to flow between the collector and the emitter. The DRC9124X0L is a pre-biased device, meaning that the base current is already set by the device\'s design. This allows the device to be used directly in an application with no extra biasing circuitry required.

The typical parameters of the DRC9124X0L are a collector-emitter voltage of 20 V, a collector-base voltage of 30 V and an emitter-base voltage of 5 V. The DC current gain of the device ranges from 20 to 400, with a maximum collector current of 200 mA and a maximum base current of 10 mA.

The device features low noise performance, good temperature stability and provides a very fast switching speed. It also has excellent temperature, voltage, and power handling capability and low power consumption.

The DRC9124X0L is designed for use in automotive, consumer, and industrial applications, and is rated for operation in ambient temperatures from -40 to 85 ˚C. The device is especially suited for automotive and industrial applications that require fast switching, reliable operation and low power consumption.

In summary, the DRC9124X0L is a single pre-biased bipolar junction transistor device which is widely used for applications that require high voltage, low current, high power, and fast switching. It offers excellent performance, reliability and low power consumption. The device is specifically designed for use in automotive, consumer and industrial applications, and is rated for operation in a wide range of temperatures.

The specific data is subject to PDF, and the above content is for reference

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