DRC9123J0L Discrete Semiconductor Products |
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Allicdata Part #: | DRC9123J0LTR-ND |
Manufacturer Part#: |
DRC9123J0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DRC9123J0L Datasheet/PDF |
Quantity: | 6000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 47 kOhms |
Base Part Number: | DRC9123 |
Supplier Device Package: | SSMini3-F3-B |
Package / Case: | SC-89, SOT-490 |
Mounting Type: | Surface Mount |
Power - Max: | 125mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DRC9123J0L is a pre-biased single bipolar junction transistor (BJT) commonly used in power electronics and other commercial applications. It is designed to handle a wide range of high power applications and can be used in a variety of commercial and industrial applications, including but not limited to automotive, aerospace and military applications. Its base is an integral part of the package and is pre-biased to ensure optimal performance. The DRC9123J0L is very reliable in high power applications and is suitable for a variety of harsh environments.
The DRC9123J0L has some unique features that make it attractive for many applications. For starters, it is a silicon nitride-based device that is much more tolerant to high temperatures than the traditional silicon-based BJTs. This allows it to handle higher voltages and currents without damage or degradation. Additionally, the package includes a unique "turnaround" feature that allows the transistor to be switched from on to off without the need for a driver circuit. It also has a built-in diode protection against electrostatic discharge (ESD).
The working principle behind the DRC9123J0L is relatively simple. As current passes through the base-collector junction, a small amount of power is dissipated which creates a voltage drop across the emitter-base junction. This voltage drop causes a current to flow through the emitter and collector, creating a voltage drop across the collector-emitter junction. The amount of current that flows through the transistor is proportional to the amount of current in the base. The amount of current that passes through the collector-emitter junction is dependent on the voltage level across the base-collector junction.
The application field for the DRC9123J0L is extremely broad. They are typically used in power switches, high power DC-to-DC converters, motor drivers, and power inverters for industrial and automotive applications. Because the device is pre-biased, it is able to quickly switch on and off without the need for an additional driver circuit, making it ideal for applications where fast switching is required. Additionally, since the package includes an integral diode protection against ESD, it is suitable to be used in harsh environments.
Overall, the DRC9123J0L is an excellent choice for a variety of high power applications. Its pre-biased design makes it easy to integrate into applications, and its Silicon Nitride construction gives it excellent performance in high temperature environments. The turn-around feature allows it to be quickly switched on and off, making it ideal for applications where fast switching is a requirement. Finally, its integral diode protection makes it suitable for use in harsh environments.
The specific data is subject to PDF, and the above content is for reference
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