Resistor - Emitter Base (R2):	4.7 kOhms
Base Part Number:	DRC9143
Supplier Device Package:	SSMini3-F3-B
Package / Case:	SC-89, SOT-490
Mounting Type:	Surface Mount
Power - Max:	125mW
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 5mA, 10V
Series:	--
Resistor - Base (R1):	4.7 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	NPN - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Transistors - Bipolar (BJT) - Single, Pre-Biased

The DRC9143E0L is a single - pre-biased bipolar junction transistor (BJT). It has a wide range of applications in power management, sensitivity control and signal amplification.Basic Working Principle of BJTA bipolar junction transistor is a type of three - terminal semiconductor device. It is composed of two closely linked semiconductor materials, a P-type material and an N-type material. Either one or both of the materials may contain a heavily doped region. The arrangement of the regions creates a PN-junction, which is then used as an amplifier.The DRC9143E0L is a type of single pre-biased BJT. It features the classic N-P-N structure, but it has a very specific set up within its P-region. Here, the base-emitter junction is reverse-biased, creating a strong collector-emitter reverse bias. This gives the transistor an inherently enhanced sensitivity and provides better control over its current capacities.The Applications Of DRC9143E0LThe DRC9143E0L is widely used in power management applications. With its ability to quickly and accurately switch currents, it is ideal for use in the DC-DC converters, SMPS, and other power electronic systems. These systems require precise and reliable current and voltage control in order to precisely maintain the desired output. The DRC9143E0L is a popular choice for this purpose due to its low saturation voltage, low On-state voltage drop and low reverse transfer capacitance.In addition to its power management capabilities, the DRC9143E0L is also used in a variety of signal amplification applications. Due to its reverse biased base-emitter junction, this transistor can provide high gain amplifications without sacrificing performance. Its excellent gain linearly response also makes it ideal for applications needing linear signal amplifications. This includes amplifiers used in complex circuit environments such as RF and radar systems.The DRC9143E0L also offers excellent switching performance. Its low saturation voltage and low On-state voltage drop makes it well-suited for high-frequency switching applications. This includes applications for the industrial, telecom and consumer markets.ConclusionThe DRC9143E0L is a single - pre-biased bipolar junction transistor (BJT). It features a classic N-P-N structure, with a reverse biased base-emitter junction. It is widely used in power management applications due to its low saturation voltage and low On-state voltage drop. It is also well-suited for linear signal amplifications and high-frequency switching applications.

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