DRC9124T0L Allicdata Electronics

DRC9124T0L Discrete Semiconductor Products

Allicdata Part #:

DRC9124T0LTR-ND

Manufacturer Part#:

DRC9124T0L

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DRC9124T0L datasheetDRC9124T0L Datasheet/PDF
Quantity: 6000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.04882
6000 +: $ 0.04394
15000 +: $ 0.03905
30000 +: $ 0.03662
75000 +: $ 0.03255
Stock 6000Can Ship Immediately
$ 0.06
Specifications
Resistor - Base (R1): 22 kOhms
Base Part Number: DRC9124
Supplier Device Package: SSMini3-F3-B
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Power - Max: 125mW
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Series: --
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DRC9124T0L is a two-terminal, pre-biased single junction field effect transistor (JFET). The DRC9124T0L is widely used in the telecommunications industry and is ideal for applications that demand high bandwidth, high-speed and high frequency performance. It is suitable for a wide variety of applications, from analog signal processing to digital logic circuits.

The DRC9124T0L is an excellent alternative to the traditional bipolar junction transistors (BJTs) due to its low noise, high current gain, and low-power consumption. It also boasts high switching speeds, wide bandwidth, and low thermal impedance. The device is well suited for use in applications such as amplifiers, gain blocks, modulators, switch circuits, and digital logic. With its high current gain, it is also well suited for the design of high-frequency pulse waveforms and switching circuits.

The operating principle of the DRC9124T0L lies in the structure of the junction field-effect transistor (JFET), also referred to as a semiconductor-gate field-effect transistor (SG-FET). A JFET is a three-terminal device composed of two N-type semiconductor materials, separated by a thin, insulating layer called the gate oxide. It is an unipolar device, meaning that it is composed of two regions of opposite charge with the gate oxide in between. The gate oxide serves to modulate the amount of current allowed to flow between the two regions.

The JFET has three distinct operational regions: the ohmic region, the saturation region, and the pinch off region. In the ohmic region, which is the region of lowest current flow, the JFET is said to be in the linear region. This means that the current flow is linearly proportional to the voltage applied across its terminals. In the saturation region, which is the region of highest current flow, the JFET is said to be in its “on” or “saturated” state. Finally, in the pinch off region, the JFET is said to be in its “off” state and the current flow is at its minimum.

The DRC9124T0L is a single, pre-biased JFET. This means that it has already been biased by the manufacturer for optimal operation. This device utilizes the ohmic region of operation and operates in the linear region. This makes it ideal for use in amplifying signals, because it can faithfully reproduce the signal without distortion. The pre-bias of the device also ensures that there is always a high current flow and is immune to temperature fluctuations.

The DRC9124T0L is suitable for a wide variety of applications, such as high-frequency analog signal processing, digital signal processing, pulse switching circuits, and amplifier circuits. With its high current gain, low noise, and low thermal impedance, it is perfect for applications where speed of operation and accuracy are crucial. It is also well suited for use as a universal switch in control systems.

The specific data is subject to PDF, and the above content is for reference

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