Allicdata Part #: | DRC9115G0LTR-ND |
Manufacturer Part#: |
DRC9115G0L |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DRC9115G0L Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05584 |
6000 +: | $ 0.05274 |
15000 +: | $ 0.04809 |
30000 +: | $ 0.04499 |
75000 +: | $ 0.04137 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Emitter Base (R2): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3-B |
Base Part Number: | DRC9115 |
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DRC9115G0L Application Field and Working Principle
The DRC9115G0L is a single, pre-biased, bipolar transistor also known as a BJT. This type of transistor is often used in electronic circuits where the current amplification factor is needed. The DRC9115G0L has a high current gain, low ICEsat, and is a very cost-effective ternary logic switch. In addition, the DRC9115G0L features a temperature range of between -55°C and +125°C.
When it comes to the application field of the DRC9115G0L, this device is used in a wide range of applications, including power management, signal amplification, and audio amplifiers. The device can also be used in a variety of signal-conditioning circuits, such as instrumentation, amplifiers, and signal processing circuits. Additionally, the DRC9115G0L is commonly used in automotive electronics and in the manufacturing of digital audio amplifiers.
The operation of the DRC9115G0L is based on the concept of a bipolar junction transistor (BJT). A BJT consists of three main terminals; the base, the collector and the emitter. When a voltage or current is applied to the base, it causes a small current to flow from the collector to the emitter. This change in current is amplified by the internal gain of the transistor, resulting in a large collector-emitter current.
The gain of a BJT is directly related to the current-gain ratio, known as the beta (β). The beta is a measure of the current gain of the BJT, and it is how much the collector current is amplified when the base current is changed. The beta of a DRC9115G0L is 100, which means that the collector current will increase by 100 times when the base current is changed.
When designing an analog circuit using a DRC9115G0L, it is important to understand how the BJT works. In addition, it is important to consider other factors, such as the quiescent current, the rise and fall times, and the power dissipation. By understanding and exploiting these factors, engineers can create reliable, cost-effective circuits that meet desired performance objectives.
The specific data is subject to PDF, and the above content is for reference
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