Allicdata Part #: | DRC9143T0LTR-ND |
Manufacturer Part#: |
DRC9143T0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DRC9143T0L Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3-B |
Base Part Number: | DRC9143 |
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The DRC9143T0L is a single pre-biased, bipolar junction transistor (BJT). It is fabricated with a stainless steel base and utilizes a NPN structure. The transistor provides excellent temperature stability and operating characteristics. The DRC9143T0L is designed for general purpose applications.
A bipolar junction transistor is a three-terminal semiconductor device in which two p-type and one n-type semiconductor materials are combined. The charge carriers flow from the n-type to the p-type region, and the transistor amplifies the current flow. In the DRC9143T0L, the p-type material is a high-purity, low-temperature silicon layer, and the n-type material is a low-temperature, high-purity germanium layer.
The DRC9143T0L has a maximum collector-emitter voltage of 40 volts, a maximum collector current of 7 amps, and a maximum gain of 2000. The pre-biased configuration ensures that the collector-emitter voltage is preset to a predetermined value. This facilitates rapid switching of the transistor, allowing it to switch quickly between two states.
The DRC9143T0L is designed to be used in switching, driver, and amplifier applications. In these applications, the transistor allows for rapid switching between two states - on and off. The transistor can be used to control or regulate the flow of electricity through circuits or devices. For example, the DRC9143T0L can be used as a driver for automotive electrical systems or to control the flow of electricity in a home security system.
The working principle of the DRC9143T0L is based on the principle of negative feedback. When the base-emitter voltage is varied, the collector-emitter current flow is relatively constant. This constant current flow is maintained by the positive feedback from the collector region to the base. The current flows from the base to the collector, and this current is amplified by the transistor.
The DRC9143T0L is a power transistor and is designed for use in power circuits. Its high voltage and current handling makes it ideal for switching applications. Its fast switching capability makes it well-suited for high frequency circuits. It can be used to switch signals very rapidly, which makes it ideal for applications such as radio-frequency (RF) control.
The DRC9143T0L is a reliable and robust transistor, which makes it well-suited for use in industrial and automotive applications. Its resistance to heat and radiation makes it ideal for use in harsh environments such as space and nuclear applications. It is also suitable for applications where fast switching is required, such as high frequency circuits.
In summary, the DRC9143T0L is a single pre-biased, bipolar junction transistor (BJT). It is designed for applications that require fast switching, such as driver, switching, and amplifier applications. Its resistance to heat and radiation makes it ideal for use in harsh environments, and its pre-biased configuration allows for quick switching between two states. The DRC9143T0L is especially suitable for power circuits, high frequency circuits, and RF control.
The specific data is subject to PDF, and the above content is for reference
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