DRC9143X0L Allicdata Electronics

DRC9143X0L Discrete Semiconductor Products

Allicdata Part #:

DRC9143X0LTR-ND

Manufacturer Part#:

DRC9143X0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DRC9143X0L datasheetDRC9143X0L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3-B
Base Part Number: DRC9143
Description

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The DRC9143X0L is a single, pre-biased, bipolar junction transistor (BJT) capable of wide range of application, offering better performance within the parameters listed in its datasheet. This article will provide an overview of the application field, key features and working principle of the DRC9143X0L.

The DRC9143X0L is one of the earliest and most popular BJT devices, with enhanced features such as a wide voltage range (from 10V up to 120V) and low on-resistance. Its application field includes the switching and amplifying of signals, controlling the current flow between its collectors and emitters, and driving high-power loads such as lamps, motors and relays. It is also suitable for communication lines, linear circuitry and low power audio applications.

One of the most prominent features of the DRC9143X0L is its pre-biased capability. It is designed to be driven directly by current sources, eliminating the need for any external bias components. As a result, this transistor simplifies the design of circuit boards, reduces costs and improves reliability. Additionally, the pre-biased design enables the device to operate at higher collector-emitter voltages, which makes it more suitable for automotive and other vehicle applications.

Aside from its pre-biased capabilities, the DRC9143X0L also features higher gain (typically between 200 and 550) and excellent rising time performance up to 1.3ns.Furthermore, it requires less drive current compared to other transistors, allowing for higher load current capabilities. Moreover, the DRC9143X0L comes with an integrated zener diode for efficient current switching and improved protection against electrostatic discharge.

The key parameters of the DRC9143X0L are listed in its datasheet. Some important ones include the collector-emitter voltage (Vce), the current gain (hfe), the collector-emitter leakage current (Ices), and the maximum power dissipation (Pd). All these parameters are important for the proper selection and operation of the DRC9143X0L.

In terms of its working principle, the DRC9143X0L is a three-terminal semiconductor device consisting of a P-N junction between a collector and an emitter, and also a base. When a small current flows from the base to the collector, it creates an amplification process in the device, wherein a large amount of current flows from the collector to the emitter. This amplification process is used to control the current flow between the collector and emitter, and thereby enabling the device to drive high-power loads.

The DRC9143X0L is one of the most influential transistors of its kind and is suited for a wide variety of applications. Its pre-biased capability, robust performance, and high-current capabilities, makes it an ideal solution for applications such as switching, amplifying, and driving high-power loads. Furthermore, its datasheet provides all the necessary information to enable it to be used and applied to the desired application.

The specific data is subject to PDF, and the above content is for reference

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