DTA124EEBTL Allicdata Electronics
Allicdata Part #:

DTA124EEBTLTR-ND

Manufacturer Part#:

DTA124EEBTL

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS PNP 150MW EMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA124EEBTL datasheetDTA124EEBTL Datasheet/PDF
Quantity: 1000
1 +: $ 0.03000
10 +: $ 0.02910
100 +: $ 0.02850
1000 +: $ 0.02790
10000 +: $ 0.02700
Stock 1000Can Ship Immediately
$ 0.03
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Base Part Number: DTA124
Supplier Device Package: EMT3
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500nA, 10mA
Series: --
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 30mA
Transistor Type: PNP - Pre-Biased
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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DTA124EEBTL bipolar junction transistor (BJT) is a single, pre-biased transistor device, designed primarily for RF and microwave applications. It is specifically designed to provide high gain and low noise, which makes it an ideal solution for many types of RF and microwave applications. This device is manufactured with a wide range of input/output capacitances, enabling it to be used in circuits requiring a wide range of bias and gain control.

The DTA124EEBTL is a single-transistor device, with a common-base configuration. This configuration provides high linearity and gives the transistor a pre-biased voltage gain (hFE) of about -4dB at the base terminal. This allows the DTA124EEBTL to be used in high-power RF and microwave applications where the output power must be controlled accurately.

The DTA124EEBTL also has a large input/output capacitance range, allowing it to be used in different circuit configurations, such as common-gate, common-emitter, and common-collector, without having to worry about capacitance mismatch. This means that the device can be used in easily adjustable linear and nonlinear applications.

The device\'s large input and output capacitance range also makes it suitable for use in switched-capacitor circuits, where it can be used as a high-impedance load cell. The DTA124EEBTL can also be used in switched-capacitor filters, providing low-noise gain control in low-Q, high-Q filters.

The DTA124EEBTL has a high breakdown voltage, and it is fully compatible with CMOS and TTL circuits. Its low power dissipation enables it to be used in circuits that require very low power use. Its high gain and low noise characteristics make it suitable for use in high power and low noise circuits, such as low-noise amplifiers and oscillators.

The device is designed to operate in temperatures ranging from -40°C to +70°C, making it a suitable device for applications that require a wide temperature range. The device is also RoHS compliant, making it an attractive solution for many RF and microwave applications.

In conclusion, the DTA124EEBTL is an ideal device for many types of RF and microwave applications. Its large input and output capacitance range make it suitable for use in a wide range of circuit applications. Its high gain, low noise characteristics make it an ideal solution for high power and low noise circuits, and its wide temperature range and RoHS compliance make it an attractive solution for many RF and microwave applications.

The specific data is subject to PDF, and the above content is for reference

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