Allicdata Part #: | DTA114YCAT116TR-ND |
Manufacturer Part#: |
DTA114YCAT116 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | PNP -100MA -50V DIGITAL TRANSIST |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA114YCAT116 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02511 |
6000 +: | $ 0.02183 |
15000 +: | $ 0.01855 |
30000 +: | $ 0.01746 |
75000 +: | $ 0.01637 |
150000 +: | $ 0.01455 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SST3 |
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The DTA114YCAT116 (hereinafter referred to as “DTA”) is a single, pre-biased, bipolar junction transistor (BJT). It is rated for a collector-base voltage of 80V, an emitter-base voltage of 9V, a collector current of 80mA, and a power output of 250mW. DTA transistors are commonly used for signal amplification and level shifting in a wide range of applications including in audio systems, television tuners, and in automotive and industrial electronics.
The DTA features a three layer construction that allows for higher input impedance and improved performance when compared to other types of transistors. This three layer construction consists of an emitter, base, and collector. The base is the middle layer of the DTA and acts as a control mechanism, allowing for current flow between the emitter and collector. The emitter provides the source for the current flow and the collector acts as a drain.
The DTA is a pre-biased BJT, meaning that it has an inherent voltage applied across the collector-base junction. This voltage is referred to as the bias voltage and is typically set by the manufacturer. As a result of this pre-setting, the DTA has a lower operating power requirement, which in turn reduces the current and power losses associated with the transistor.
When DTA transistors are used for signal amplification, the collector voltage is typically set at a higher level than the base voltage in order to increase current flow. This creates a voltage difference across the collector-base junction, producing an amplification effect. The emitter-base voltage of the DTA is held at a constant level in order to ensure a predictable level of performance. This can be accomplished by using an appropriate DC bias voltage source.
The DTA can also be used for level shifting applications. In this case, the collector voltage is regulated at a lower level than the base voltage in order to create a voltage difference across the collector-base junction. By doing this, the output voltage of the transistor is shifted to a different level, allowing for voltage conversions. DTA transistors are particularly well-suited for this type of application due to their low threshold bias voltage, high maximum voltage ratings, and low power consumption.
In summary, the DTA114YCAT116 is a single, pre-biased bipolar junction transistor that is used for a variety of applications. Thanks to its three layer construction and pre-setting bias voltage, the DTA provides excellent performance for both signal amplification and level shifting. It is well suited for these applications due to its low threshold bias voltage, high maximum voltage ratings, and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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