| Allicdata Part #: | DTA114YET1OS-ND |
| Manufacturer Part#: |
DTA114YET1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PREBIAS PNP 200MW SC75 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
| DataSheet: | DTA114YET1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 10 kOhms |
| Resistor - Emitter Base (R2): | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max): | 500nA |
| Power - Max: | 200mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-75, SOT-416 |
| Supplier Device Package: | SC-75, SOT-416 |
| Base Part Number: | DTA114 |
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The DTA114YET1 is a type of single pre-biased bipolar junction transistor (BJT) designed to make switching and amplifying tasks simpler and easier. It has been designed to maximize the efficiency of transistors while minimizing the electrical current required to perform these tasks.
The DTA114YET1 is a member of the discrete transistor family and it can be used in a variety of analog and digital circuits. The device is capable of operating up to the band gap of silicon of 1.12 volts and can handle current levels up to 100 mA. It also features a low on-resistance of 0.1Ω and a low off-resistance of 20KΩ.
The DTA114YET1\'s application fields include high frequency switching, linear signal processing, and signal amplification. This BJT\'s unique design gives it the advantage of high-speed switching and linear signal processing with minimal power dissipation.
The device has an off-state voltage rating of 80 V, a breakdown voltage of 4.2 V, and a maximum load voltage rating of 150 V. It also features a on-state current parameter of 40 mA, a peak current rating of 5.6 Amps, and a maximum PIV rating of 3.2W.
The working principle of the DTA114YET1 is based on the use of its three terminals. The emitter and collector are connected to power supplies and its base terminal is used to control the voltage differences between the two other terminals. The base terminal works as an amplifier and its resistance value is the main factor that determines the device\'s performance.
The DTA114YET1 is designed to be used in a variety of applications such as low-power high-frequency signal processing, signal amplification, and switching. It is an ideal choice for microcontroller-based signal processing circuits, power-sensitive analog and signal processing systems, and applications that require precise low-power switching and current storage.
The combination of feature sets of the DTA114YET1, its high performance and low power consumption, and its versatility make it an ideal choice for a wide range of professional and hobbyist applications. This includes, but is not limited to, motor control, digital circuit and board designs, and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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DTA114YET1 Datasheet/PDF