DTA143TEBTL Allicdata Electronics
Allicdata Part #:

DTA143TEBTL-ND

Manufacturer Part#:

DTA143TEBTL

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS PNP 150MW EMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA143TEBTL datasheetDTA143TEBTL Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02511
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3
Base Part Number: DTA143
Description

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Bipolar Junction Transistors (BJTs) are some of the most common semiconductor devices used in a wide variety of digital and analog applications. Different kinds of BJTs offer different features that make them well suited for specific tasks, such as amplifying signals, switching signals on and off, or controlling power. The DTA143TEBTL is one such device, a single, pre-biased BJT specifically designed for low-power applications.

The DTA143TEBTL is a specifically designed, low-power, pre-biased BJT from Texas Instruments. A pre-biased BJT requires only two bias voltages and provides higher linearity than two transistors biased independently. It is designed for low-power applications such as active filters and signal conditioning. As such, it features low power dissipation, low collector-emitter saturation voltage, low VCE(sat) and high gain. It also has a low noise figure and low thermal resistance.

The working principle of a BJT is based on the flow of current across a semiconductor junction. When a voltage is applied to the junction, a current flows through it. This current flow is known as the transistor effect, and it is what allows transistors to act as amplifiers or switches. In the case of the DTA143TEBTL, the pre-biased BJT is designed to provide increased linearity and better noise performance through its low VCE(sat) and low power dissipation.

The DTA143TEBTL is used in a variety of applications, including signal conditioning, active filtering, amplifier stages, driver stages, switches, and power management. Its low power dissipation and low collector-emitter saturation voltage make it well-suited for low-power applications. Its high gain and low noise figure also make it an ideal choice for amplifier stages and signal conditioning. In addition, its low thermal resistance makes it suitable for use in high-temperature environments.

The DTA143TEBTL is a versatile and reliable BJT that can be used in a wide range of applications. Its pre-biased design and low power dissipation make it an ideal choice for low-power applications. Its low VCE(sat), high gain, and low noise figure make it an excellent choice for amplifier stages and signal conditioning, while its low thermal resistance makes it suitable for use in high-temperature environments. Overall, the DTA143TEBTL is an ideal device for many different applications.

The specific data is subject to PDF, and the above content is for reference

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