DTA143EM3T5G Allicdata Electronics
Allicdata Part #:

DTA143EM3T5GOSTR-ND

Manufacturer Part#:

DTA143EM3T5G

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 260MW SOT723
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA143EM3T5G datasheetDTA143EM3T5G Datasheet/PDF
Quantity: 1000
16000 +: $ 0.01848
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 260mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SOT-723
Base Part Number: DTA143
Description

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The DTA143EM3T5G transistor is a single, pre-biased bipolar junction transistor (BJT) that offers unmatched performance for a wide range of applications. The device features low power consumption and high reliability, along with low thermal resistance and high breakdown voltage. This article explores the application fields and working principles for the DTA143EM3T5G.

Applications

The DTA143EM3T5G transistors are ideal for many different applications, including switching, amplifier, line drive, and consumer electronics. These transistors can be used in power supplies, motor control systems, and power converters. They are also suited for various consumer electronic devices, such as remote control systems and audio amplifiers. Additionally, the device is suitable for a range of logic circuits, including voltage-controlled logic gates and memory circuits.

Working Principle

The DTA143EM3T5G operates as a pre-biased bipolar junction transistor (BJT). This type of device consists of two p-n junctions that are connected in series. A voltage is applied to the base junction, which creates a potential difference between the collector and emitter. This potential difference, referred to as the common-emitter voltage, is used to control the flow of electricity through the device. When the voltage increases, the flow of electrons through the device increases, allowing for greater current and higher power outputs.

The most crucial factor in controlling the operation of the DTA143EM3T5G is its current gain. This is a measure of how much the output current is amplified relative to the input current. The current gain is determined by the ratio of the collector current to the base current, or hFE. This hFE value determines the overall performance of the device, as it affects the output current, power levels, efficiency, and other important parameters.

The DTA143EM3T5G offers excellent performance in many applications, thanks to its low power consumption and high switching capability, as well as its low thermal resistance and high breakdown voltage. Its pre-biased design also provides increased flexibility and versatility, making it suitable for a wide range of applications. With its high performance, excellent reliability, and unmatched versatility, the DTA143EM3T5G transistor is an ideal choice for a broad range of applications.

The specific data is subject to PDF, and the above content is for reference

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