Allicdata Part #: | DTA114EU3T106TR-ND |
Manufacturer Part#: |
DTA114EU3T106 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | PNP -100MA -50V DIGITAL TRANSIST |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA114EU3T106 Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.02193 |
6000 +: | $ 0.01978 |
15000 +: | $ 0.01720 |
30000 +: | $ 0.01548 |
75000 +: | $ 0.01376 |
150000 +: | $ 0.01147 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased + Diode |
Current - Collector (Ic) (Max): | 100mA |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | UMT3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DTA114EU3T106 is a single, pre-biased, bipolar junction transistor (BJT) that makes use of a variety of features to bring together the power and reliability of BJT devices while still providing an economic and efficient operation. The device utilizes an efficient 2N3904 style transistor with a PNP-type emitter, making it ideal for applications in low-power switching and linear circuit design.
As a single BJT, the DTA114EU3T106 uses a collector to emitter of up to 80 Volts. It also has a minimum collector-emitter saturation voltage of 0.2 V and a maximum collector current of 1 A. These features make the device ideal for a variety of applications, from driving LEDs and solenoids to switching low-powered circuits.
When it comes to the working principle of the DTA114EU3T106, the device follows all the same operating principles of any other BJT. From a basic level, the device works by allowing current to flow between the emitter and the collector when the base voltage is sufficiently high.
In the case of the DTA114EU3T106, this voltage must be greater than 0.7 volts, or 0.2 volts less than the emitter-base forward bias voltage. This allows the device to work in lower-power applications. The higher voltage, the greater current amplification will be available from the device.
In terms of usage and application for the DTA114 EU3T106, the device is well-suited for use in consumer electronics, automotive, industrial, and other power supply applications, due to its low power consumption and durable construction. As a pre-biased device, it is capable of managing the power usage of a power supply, while still providing efficient operation with minimal noise.
The device is also well-suited for use in low-power analog circuits, such as limiting amplifiers, audio and video circuits, and use in instrumentation or control systems where current sensing is required. Due to its efficient emitter-collector saturation voltage, it can also be used in various analog applications.
When engaging in any projects involving the DTA114EU3T106, numerous precautions need to be taken. It is important to be aware of the voltage-way of this device, as the collector-emitter voltage must be carefully controlled to ensure correct operation of the device. Additionally, the device\'s maximum collector current should not be exceeded, as this can lead to a potential for device damage.
Overall, the DTA114EU3T106 is an effective and economical solution for a variety of power supply, low-power switching, and linear circuit design applications. Its efficient 2N3904 transistor design allows it to handle the power needs of applications while still providing an efficient operation with minimal noise and a minimum collector-emitter saturation voltage.
The specific data is subject to PDF, and the above content is for reference
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