DTC114TCAHZGT116 Allicdata Electronics
Allicdata Part #:

DTC114TCAHZGT116TR-ND

Manufacturer Part#:

DTC114TCAHZGT116

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: NPN 100MA 50V DIGITAL TRANSISTOR
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC114TCAHZGT116 datasheetDTC114TCAHZGT116 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02024
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 350mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3
Description

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Transistors are used to control the flow of current in many electronic applications. Bipolar (BJT) transistors are the most common form of transistors and are so named because of their two base regions connected by a common middle region. A single, pre-biased BJT is a device where the base regions are already charged with a voltage and current. DTC114TCAHZGT116 is a single, pre-biased BJT designed for use in a variety of applications.

The DTC114TCAHZGT116 is a two terminal device that comprises a PNP transistor with an NPN transistor integrated within the same package. The package also includes two resistors; one between the base and emitter of the PNP and the other between the NPN’s base and collector. The resistors come in various values to enable the device to be optimized to particular applications.

Unlike a standard BJT, the DTC114TCAHZGT116 has two emitter terminals; one for the PNP and one for the NPN. Both transistors have the same transfer characteristics; this means that both their collector and emitter currents will be equal for the same base current. This makes the device useful for controlling and regulating current in certain applications.

The primary uses for the DTC114TCAHZGT116 are in circuits which require a pre-biased BJT. These types of circuits would normally involve multiple transistors with different voltages present at various nodes. The DTC114TCAHZGT116 simplifies this considerably as the pre-biased nature of the transistor means that multiple voltage sources are unnecessary.

The principal application of the DTC114TCAHZGT116 is in the power management industry. Because the device is biased to a suitable voltage, it can measure incoming voltage, current and peak voltage. This makes the device an ideal choice for power management systems, as it can regulate the power supply without the need for an additional power supply.

The working principle of the DTC114TCAHZGT116 is relatively simple. The NPN transistors act as an amplifier, while the PNP transistors act as a switch. When a current is applied to the base of the NPN, the transistor will start to amplify the current, which then flows from the collector to the emitter. The PNP will then activate, allowing the amplified current to flow to the emitter. The result is that more current is able to pass through the device, allowing for more efficient operation and more power.

The DTC114TCAHZGT116 is an ideal device for circuits which require pre-biased BJTs. Its main application is in the power management industry, where it is used to measure incoming voltage and peak voltage. The combination of the NPN and PNP transistors, as well as the resistors, allows the device to be optimized for particular applications. By understanding the principles behind the device and its associated applications, engineers can make better use of the DTC114TCAHZGT116 in their designs.

The specific data is subject to PDF, and the above content is for reference

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