DTC143ZUAT106

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	250MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	UMT3
Base Part Number:	DTC143

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Introduction

DTC143ZUAT106 is a single, pre-biased, bipolar junction transistor (BJT). It is an important type of transistor used in many circuits today, especially in high power systems. This article will cover the application field and working principle of this device.

Approved Applications

DTC143ZUAT106 is an n-p-n Bipolar Junction Transistor (BJT). It is especially approved to use in medium power switching applications. This type of device has a current gain of 30mA at a collector-emitter voltage of 30 Volts and a maximum power dissipation of 400mW. This is one of the main advantages of DTC143ZUAT106, as it increases efficiency and power saving.Another approved application of this device is high-frequency radio communications and other industrial applications such as audio amplifiers and product sensors. The DTC143ZUAT106 has RF performance capabilities, making it an excellent option for such applications.Finally, DTC143ZUAT106 is a very reliable and robust device, making it a great choice for high-power applications. This device\'s extreme stability and temperature range (from -55°C to 150°C) make it a great option for different scenarios.

Working Principle

The bipolar junction transistor (BJT) is a semiconductor device that functions like two diodes connected in series. It works as a current amplifier, as electric signals can bidirectionally control the electric current that passes through the transistor base.In BJTs, the base-collector junction is forward-biased and the base-emitter junction is reverse-biased in order for the device to start conducting. This setup allows current to flow from the collector to the emitter, amplified by the current gain or beta (

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