DTC114TETL Allicdata Electronics
Allicdata Part #:

DTC114TETLTR-ND

Manufacturer Part#:

DTC114TETL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS NPN 150MW EMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC114TETL datasheetDTC114TETL Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Base Part Number: DTC114
Supplier Device Package: EMT3
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Series: --
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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A DTC114TETL is a type of semiconductor device used for high-power switching applications. This device typically consists of a single bipolar junction transistor (BJT) which is pre-biased in order to reduce switching losses. The device has several advantages over other types of BJTs, including high current and voltage ratings, low switching losses, and low manufacturing costs. This makes it an ideal choice for applications requiring high-power switching and high-speed switching.

The DTC114TETL consists of two parts – the emitter and the collector. The emitter is connected to a positive voltage supply which causes a bias current to flow and generate an electric field. The collector is then connected to a negative voltage supply which produces a reverse-bias current. When an input signal is applied, the bias current creates an electric field that changes the conductivity of the junction between the emitter and the collector, and allows current to flow from the collector to the emitter. This process is known as base-emitter junction conduction.

The DTC114TETL is a type of BJT which is pre-biased for reduced switching losses. This allows for faster switching speeds and lower power consumption. The device works by preloading the base-emitter junction with a certain amount of current and voltage. When a signal is applied, the base-emitter junction will conduct and allow current to flow from the collector to the emitter. This reduces the switch-off speed of the device and increases the efficiency of the device. In addition, the device requires less heat production and is therefore cooler, making it an ideal choice for applications requiring high-power switching.

The DTC114TETL is also very versatile, allowing it to be used in a wide variety of applications. It can be used as a power switch to convert AC to DC, as a motor control switch, as a driver for stepper motors, and in audio amplifiers. Its low power consumption makes it suitable for battery-powered devices. In addition, the device has a high current capability and can be used in applications requiring high-power switching.

In conclusion, the DTC114TETL is an ideal device for applications requiring high-power switching and high-speed switching. It is a low-power switch with low switching losses, and its versatility also makes it suitable for a wide range of applications. It is an excellent choice for those looking for an efficient and cost-effective switching solution.

The specific data is subject to PDF, and the above content is for reference

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